STP20N60M2 vs IPP60R190P6XKSA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma STP20N60M2 tarafından STMicroelectronics ve IPP60R190P6XKSA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
STMicroelectronics
STP20N60M2 - 600V 20A N-Channel Power MOSFET | STMicroelectronics
STP20N60M2 Obsolete
Özellik Karşılaştırması
| Parametre | STP20N60M2 | IPP60R190P6XKSA1 |
|---|---|---|
| Marka | STMicroelectronics | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Obsolete | Aktif |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 20 A | — |
| Continuous Drain Current (ID) at 100°C | 12 A | — |
| Pulsed Drain Current (IDM) | 80 A | — |
| On-Resistance (RDS(on)) | 0.19 ohm typical, 0.23 ohm max | — |
| Gate-Source Voltage (VGS) | ±25 V | — |
| Gate Threshold Voltage (VGS(th)) | 2 V to 4 V | — |
| Total Gate Charge (Qg) | 45 nC | — |
| Input Capacitance (Ciss) | 1900 pF | — |
| Output Capacitance (Coss) | 120 pF | — |
| Reverse Transfer Capacitance (Crss) | 5 pF | — |
| Avalanche Energy (EAS) | 400 mJ | — |
| Thermal Resistance (Junction-to-Case) | 1.67 °C/W | — |
| Jantten Ortama Termal Direnç | 62.5 °C/W | — |
| İşletim Sıcaklığı Aralığı | -55°C to +150°C | -55C to +150C (junction) |
| Paket | TO-220 | PG-TO220-3 (through-hole) |
| Montaj Türü | Through Hole | Through Hole |
| RoHS Durumu | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS P6 |
| Technology | — | Superjunction (SJ) MOSFET |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 20.2 A |
| On-Resistance RDS(on) max at 25C | — | 190 mOhm |
| Total Power Dissipation (Ptot) at Tc=25C | — | 151 W |
| Gate Drive Voltage (typical) | — | 10 V |
| Lead-Free | — | Yes |
| MSL Seviyesi | — | Not applicable (through-hole) |
| Product Variant | — | XKSA1 (industrial grade, tube pack) |