STP20N60M2 vs IPP60R190P6XKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci STP20N60M2 disebabkan oleh STMicroelectronics dan IPP60R190P6XKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr STP20N60M2 IPP60R190P6XKSA1
Merek STMicroelectronics Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Obsolete Aktif
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID) at 25°C 20 A —
Continuous Drain Current (ID) at 100°C 12 A —
Pulsed Drain Current (IDM) 80 A —
On-Resistance (RDS(on)) 0.19 ohm typical, 0.23 ohm max —
Gate-Source Voltage (VGS) ±25 V —
Gate Threshold Voltage (VGS(th)) 2 V to 4 V —
Total Gate Charge (Qg) 45 nC —
Input Capacitance (Ciss) 1900 pF —
Output Capacitance (Coss) 120 pF —
Reverse Transfer Capacitance (Crss) 5 pF —
Avalanche Energy (EAS) 400 mJ —
Thermal Resistance (Junction-to-Case) 1.67 °C/W —
Tegangan Panas, Hubungan ke Lingkungan 62.5 °C/W —
Gambaran Suhu Operasi -55°C to +150°C -55C to +150C (junction)
Kemasan TO-220 PG-TO220-3 (through-hole)
Jenis Pemasangan Through Hole Through Hole
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — CoolMOS P6
Technology — Superjunction (SJ) MOSFET
Channel Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 20.2 A
On-Resistance RDS(on) max at 25C — 190 mOhm
Total Power Dissipation (Ptot) at Tc=25C — 151 W
Gate Drive Voltage (typical) — 10 V
Lead-Free — Yes
Aras MSL — Not applicable (through-hole)
Product Variant — XKSA1 (industrial grade, tube pack)

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