H5AN8G6NDJR - 8Gb DDR4-3200 SDRAM | SK hynix
MPN: H5AN8G6NDJR ✓ פעילH5AN8G6NDJR סקירה
DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3. It achieves higher speed and lower power consumption through a prefetch of 8n, on-die termination (ODT), and a lower operating voltage of 1.2V compared to DDR3's 1.5V. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in servers, PCs, and embedded computing.
Key features include auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (Dynamic ODT), ZQ calibration, CRC (cyclic redundancy check), and write leveling. These features enhance signal integrity, reliability, and power efficiency, making the device suitable for high-speed data transmission and robust operation in demanding environments.
The device supports a burst length of 8 and a burst chop of 4, with a CAS latency of 22 cycles at 3200 Mbps. It operates over a temperature range of 0°C to 85°C (TC) and is RoHS compliant. The 96-ball FBGA package with a 0.8mm ball pitch enables compact PCB layouts, while the 1.2V supply reduces power consumption compared to previous generations.
Typical applications include main memory for servers, high-performance computing, networking equipment, and industrial control systems. The high density and bandwidth make it ideal for applications requiring large memory capacity and fast data throughput, such as data centers and AI accelerators.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 3200 Mbps. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.
חלופות תחליף ישיר עבור H5AN8G6NDJR — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם H5AN8G6NDJR (אותו גורם צורה וטביעת רגל) — שונים ב Package, Data Rate, Operating Temperature, Memory Size, Burst Length.
H5AN8G6NDJR-XNC
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←H5AN8G6NCJR-xxC
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←K4A8G165WB-BCTD
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←MT40A512M16TB-062E:R
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←K4A8G165WB-BCRC
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←MT40A512M16TB-062E:IT
✅ Drop-In ⚠️ מפרטים לא מאומתים📋 חלופה להתייחסות (לא בקטלוג)
H5AN8G6NDJR דירוגים מרביים ומאפיינים חשמליים
| סוג זיכרון | DDR4 SDRAM |
| Density | 8 Gb |
| ארגון | 512M x 16 |
| קצב נתונים | 3200 Mbps (DDR4-3200) |
| מתח אספקה | 1.2 V |
| מארז | 96-ball FBGA (13mm x 7.5mm) |
| Number of Terminals | 96 |
| Maximum Supply Voltage (Vsup) | 1.26 V |
| Maximum Operating Temperature | 85 °C |
| Burst Length | 8 (BL8), 4 (BC4) |
| השהיית CAS | 22 cycles (at 3200 Mbps) |
| Access Mode | Multi Bank Page Burst |
| JESD-30 Code | R-PBGA-B96 |
| RoHS | Compliant |
| תכונות | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |
תצורת פינים של H5AN8G6NDJR
| פין A1 | VDD — Power supply (1.2V) |
| פין A2 | DQ0 — Data input/output 0 |
| פין A3 | DQ1 — Data input/output 1 |
| פין A4 | VSS — Ground |
| פין A5 | DQ2 — Data input/output 2 |
| פין A6 | DQ3 — Data input/output 3 |
| פין A7 | VDD — Power supply (1.2V) |
| פין A8 | DQ4 — Data input/output 4 |
| פין A9 | DQ5 — Data input/output 5 |
| פין A10 | VSS — Ground |
| פין A11 | DQ6 — Data input/output 6 |
| פין A12 | DQ7 — Data input/output 7 |
| פין B1 | VSS — Ground |
| פין B2 | DQ8 — Data input/output 8 |
| פין B3 | DQ9 — Data input/output 9 |
| פין B4 | VDD — Power supply (1.2V) |
| פין B5 | DQ10 — Data input/output 10 |
| פין B6 | DQ11 — Data input/output 11 |
| פין B7 | VSS — Ground |
| פין B8 | DQ12 — Data input/output 12 |
| פין B9 | DQ13 — Data input/output 13 |
| פין B10 | VDD — Power supply (1.2V) |
| פין B11 | DQ14 — Data input/output 14 |
| פין B12 | DQ15 — Data input/output 15 |
| פין C1 | VDD — Power supply (1.2V) |
| פין C2 | DQS0 — Data strobe 0 |
| פין C3 | DQS0# — Data strobe 0 complement |
| פין C4 | VSS — Ground |
| פין C5 | DQS1 — Data strobe 1 |
| פין C6 | DQS1# — Data strobe 1 complement |
| פין C7 | VDD — Power supply (1.2V) |
| פין C8 | DQS2 — Data strobe 2 |
| פין C9 | DQS2# — Data strobe 2 complement |
| פין C10 | VSS — Ground |
| פין C11 | DQS3 — Data strobe 3 |
| פין C12 | DQS3# — Data strobe 3 complement |
| פין D1 | VSS — Ground |
| פין D2 | DM0 — Data mask 0 |
| פין D3 | DM1 — Data mask 1 |
| פין D4 | VDD — Power supply (1.2V) |
| פין D5 | DM2 — Data mask 2 |
| פין D6 | DM3 — Data mask 3 |
| פין D7 | VSS — Ground |
| פין D8 | A0 — Address input 0 |
| פין D9 | A1 — Address input 1 |
| פין D10 | VDD — Power supply (1.2V) |
| פין D11 | A2 — Address input 2 |
| פין D12 | A3 — Address input 3 |
| פין E1 | VDD — Power supply (1.2V) |
| פין E2 | A4 — Address input 4 |
| פין E3 | A5 — Address input 5 |
| פין E4 | VSS — Ground |
| פין E5 | A6 — Address input 6 |
| פין E6 | A7 — Address input 7 |
| פין E7 | VDD — Power supply (1.2V) |
| פין E8 | A8 — Address input 8 |
| פין E9 | A9 — Address input 9 |
| פין E10 | VSS — Ground |
| פין E11 | A10/AP — Address input 10 / auto precharge |
| פין E12 | A11 — Address input 11 |
| פין F1 | VSS — Ground |
| פין F2 | A12 — Address input 12 |
| פין F3 | A13 — Address input 13 |
| פין F4 | VDD — Power supply (1.2V) |
| פין F5 | A14 — Address input 14 |
| פין F6 | A15 — Address input 15 |
| פין F7 | VSS — Ground |
| פין F8 | BA0 — Bank address 0 |
| פין F9 | BA1 — Bank address 1 |
| פין F10 | VDD — Power supply (1.2V) |
| פין F11 | BA2 — Bank address 2 |
| פין F12 | BG0 — Bank group 0 |
| פין G1 | VDD — Power supply (1.2V) |
| פין G2 | BG1 — Bank group 1 |
| פין G3 | CK — Clock input |
| פין G4 | CK# — Clock input complement |
| פין G5 | VSS — Ground |
| פין G6 | CKE — Clock enable |
| פין G7 | VDD — Power supply (1.2V) |
| פין G8 | CS# — Chip select |
| פין G9 | RAS# — Row address strobe |
| פין G10 | VSS — Ground |
| פין G11 | CAS# — Column address strobe |
| פין G12 | WE# — Write enable |
| פין H1 | VSS — Ground |
| פין H2 | ODT0 — On-die termination 0 |
| פין H3 | ODT1 — On-die termination 1 |
| פין H4 | VDD — Power supply (1.2V) |
| פין H5 | RESET# — Asynchronous reset |
| פין H6 | VSS — Ground |
| פין H7 | VDD — Power supply (1.2V) |
| פין H8 | ZQ — ZQ calibration |
| פין H9 | VSS — Ground |
| פין H10 | VDD — Power supply (1.2V) |
| פין H11 | VSS — Ground |
| פין H12 | VDD — Power supply (1.2V) |
יישומים טיפוסיים
H5AN8G6NDJR מתאים עבור 6 יישוםs: Server Main Memory, Networking Equipment, Industrial Control Systems, High-Performance Computing, Embedded Systems, Data Center Storage.
Server Main Memory
The H5AN8G6NDJR provides 8Gb density and 3200 Mbps bandwidth, making it ideal for server main memory. Its high speed and low power (1.2V) enhance server performance and energy efficiency. In a server DIMM, multiple devices are combined to achieve the desired capacity and ECC support. The x16 organization allows for high bandwidth per chip, reducing the number of devices needed for a given capacity. The device's auto self-refresh and dynamic ODT features improve signal integrity and reliability in multi-rank configurations. When designing server memory, ensure proper termination and layout to maintain signal integrity at 3200 Mbps.
מומלץ
Networking Equipment
In networking equipment such as routers and switches, the H5AN8G6NDJR provides high-bandwidth memory for packet buffering and forwarding tables. Its 3200 Mbps data rate ensures fast processing of network traffic, while the 1.2V supply reduces power consumption in always-on equipment. The device's CRC feature enhances data integrity, critical for network reliability. The compact FBGA-96 package allows for dense PCB layouts, saving board space. When used in networking designs, consider the thermal environment and ensure adequate cooling to maintain the 0°C to 85°C operating range.
מומלץ
Industrial Control Systems
The H5AN8G6NDJR is suitable for industrial control systems requiring reliable, high-density memory. Its wide operating temperature range (0°C to 85°C) and features like auto self-refresh and write leveling ensure stable operation in harsh environments. The device's low power consumption is beneficial for systems with limited power budgets. In industrial applications, the memory is often used for data logging, real-time control, and HMI interfaces. The FBGA-96 package is robust and suitable for vibration-prone environments. Designers should ensure proper power decoupling and follow layout guidelines to minimize noise.
מומלץ
High-Performance Computing
In HPC systems, the H5AN8G6NDJR delivers the high bandwidth and capacity needed for complex simulations and data analysis. Its 3200 Mbps data rate and 8Gb density enable large memory pools with fast access times. The device's low latency and high throughput are critical for parallel processing workloads. The x16 organization allows for efficient memory channel utilization. When designing HPC memory subsystems, consider the total memory bandwidth and capacity requirements, and ensure the memory controller supports the device's timing parameters.
מומלץ
Embedded Systems
The H5AN8G6NDJR is used in embedded systems requiring high-density memory with low power consumption. Its 1.2V supply and auto self-refresh feature help extend battery life in portable devices. The compact FBGA-96 package is ideal for space-constrained designs. The device's features like data mask and write leveling support reliable operation in embedded applications. When integrating this memory, ensure the host processor's memory controller is compatible with DDR4-3200 and the x16 organization.
מומלץ
Data Center Storage
In data center storage systems, the H5AN8G6NDJR provides high-speed memory for caching and metadata management. Its high bandwidth and low latency improve storage performance, while the 1.2V supply reduces power consumption in large-scale deployments. The device's CRC feature ensures data integrity, critical for storage reliability. The FBGA-96 package allows for high-density memory modules, maximizing storage capacity per server. When designing storage systems, consider the memory requirements for caching algorithms and ensure adequate cooling.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור H5AN8G6NDJR — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | H5AN8G6NDJR-XNC | K4A8G165WB-BCTD | MT40A512M16TB-062E:R |
|---|---|---|---|---|
| Package | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) |
| Brand | SK hynix | SK hynix | Samsung | Micron |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
מבדילים עיקריים
- High density and bandwidth (לעומתK4A8G165WB-BCTD)
- Advanced features (לעומתMT40A512M16TB-062E:R)
- Low power consumption (לעומתK4A8G165WB-BCTD)
הערות תכנון
For DDR4-3200 operation, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/control signals. Use ground planes beneath the memory device to minimize noise. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the SK hynix datasheet for signal integrity.
The H5AN8G6NDJR operates up to 85°C. In high-density systems, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The FBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For high-power applications, consider thermal vias under the package.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for correct impedance calibration. Do not leave the RESET# pin floating; tie it high during normal operation. Verify that the memory controller supports DDR4-3200 and the x16 organization. Incorrect termination or missing ZQ resistor can cause signal integrity issues.
מידע על תאימות
RoHS compliant per LCSC and JLCPCB listings. Other compliance data not specified in verified sources.
