H5AN8G6NDJR - 8Gb DDR4-3200 SDRAM | SK hynix
MPN: H5AN8G6NDJR ✓ نشطH5AN8G6NDJR نظرة عامة
DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3. It achieves higher speed and lower power consumption through a prefetch of 8n, on-die termination (ODT), and a lower operating voltage of 1.2V compared to DDR3's 1.5V. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in servers, PCs, and embedded computing.
Key features include auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (Dynamic ODT), ZQ calibration, CRC (cyclic redundancy check), and write leveling. These features enhance signal integrity, reliability, and power efficiency, making the device suitable for high-speed data transmission and robust operation in demanding environments.
The device supports a burst length of 8 and a burst chop of 4, with a CAS latency of 22 cycles at 3200 Mbps. It operates over a temperature range of 0°C to 85°C (TC) and is RoHS compliant. The 96-ball FBGA package with a 0.8mm ball pitch enables compact PCB layouts, while the 1.2V supply reduces power consumption compared to previous generations.
Typical applications include main memory for servers, high-performance computing, networking equipment, and industrial control systems. The high density and bandwidth make it ideal for applications requiring large memory capacity and fast data throughput, such as data centers and AI accelerators.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 3200 Mbps. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.
بدائل مباشرة لـ H5AN8G6NDJR — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع H5AN8G6NDJR (نفس عامل الشكل والبصمة) — يختلف في Package, Data Rate, Operating Temperature, Memory Size, Burst Length.
H5AN8G6NDJR-XNC
✅ بديل مباشر✗ غير متوفر
$55.6818 / وحدة
عرض ورقة البيانات ←H5AN8G6NCJR-xxC
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←K4A8G165WB-BCTD
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✗ غير متوفر
$37 / وحدة
عرض ورقة البيانات ←MT40A512M16TB-062E:R
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✓ متوفر في المخزون
$60 / وحدة
عرض ورقة البيانات ←K4A8G165WB-BCRC
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✗ غير متوفر
$12.57 / وحدة
عرض ورقة البيانات ←MT40A512M16TB-062E:IT
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها📋 بديل مرجعي (غير موجود في الكتالوج)
H5AN8G6NDJR الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR4 SDRAM |
| Density | 8 Gb |
| التنظيم | 512M x 16 |
| معدل البيانات | 3200 Mbps (DDR4-3200) |
| جهد التغذية | 1.2 V |
| العلبة | 96-ball FBGA (13mm x 7.5mm) |
| Number of Terminals | 96 |
| Maximum Supply Voltage (Vsup) | 1.26 V |
| Maximum Operating Temperature | 85 °C |
| Burst Length | 8 (BL8), 4 (BC4) |
| زمن الوصول CAS | 22 cycles (at 3200 Mbps) |
| Access Mode | Multi Bank Page Burst |
| JESD-30 Code | R-PBGA-B96 |
| RoHS | Compliant |
| الميزات | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |
تكوين أطراف H5AN8G6NDJR
| دبوس A1 | VDD — Power supply (1.2V) |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس A4 | VSS — Ground |
| دبوس A5 | DQ2 — Data input/output 2 |
| دبوس A6 | DQ3 — Data input/output 3 |
| دبوس A7 | VDD — Power supply (1.2V) |
| دبوس A8 | DQ4 — Data input/output 4 |
| دبوس A9 | DQ5 — Data input/output 5 |
| دبوس A10 | VSS — Ground |
| دبوس A11 | DQ6 — Data input/output 6 |
| دبوس A12 | DQ7 — Data input/output 7 |
| دبوس B1 | VSS — Ground |
| دبوس B2 | DQ8 — Data input/output 8 |
| دبوس B3 | DQ9 — Data input/output 9 |
| دبوس B4 | VDD — Power supply (1.2V) |
| دبوس B5 | DQ10 — Data input/output 10 |
| دبوس B6 | DQ11 — Data input/output 11 |
| دبوس B7 | VSS — Ground |
| دبوس B8 | DQ12 — Data input/output 12 |
| دبوس B9 | DQ13 — Data input/output 13 |
| دبوس B10 | VDD — Power supply (1.2V) |
| دبوس B11 | DQ14 — Data input/output 14 |
| دبوس B12 | DQ15 — Data input/output 15 |
| دبوس C1 | VDD — Power supply (1.2V) |
| دبوس C2 | DQS0 — Data strobe 0 |
| دبوس C3 | DQS0# — Data strobe 0 complement |
| دبوس C4 | VSS — Ground |
| دبوس C5 | DQS1 — Data strobe 1 |
| دبوس C6 | DQS1# — Data strobe 1 complement |
| دبوس C7 | VDD — Power supply (1.2V) |
| دبوس C8 | DQS2 — Data strobe 2 |
| دبوس C9 | DQS2# — Data strobe 2 complement |
| دبوس C10 | VSS — Ground |
| دبوس C11 | DQS3 — Data strobe 3 |
| دبوس C12 | DQS3# — Data strobe 3 complement |
| دبوس D1 | VSS — Ground |
| دبوس D2 | DM0 — Data mask 0 |
| دبوس D3 | DM1 — Data mask 1 |
| دبوس D4 | VDD — Power supply (1.2V) |
| دبوس D5 | DM2 — Data mask 2 |
| دبوس D6 | DM3 — Data mask 3 |
| دبوس D7 | VSS — Ground |
| دبوس D8 | A0 — Address input 0 |
| دبوس D9 | A1 — Address input 1 |
| دبوس D10 | VDD — Power supply (1.2V) |
| دبوس D11 | A2 — Address input 2 |
| دبوس D12 | A3 — Address input 3 |
| دبوس E1 | VDD — Power supply (1.2V) |
| دبوس E2 | A4 — Address input 4 |
| دبوس E3 | A5 — Address input 5 |
| دبوس E4 | VSS — Ground |
| دبوس E5 | A6 — Address input 6 |
| دبوس E6 | A7 — Address input 7 |
| دبوس E7 | VDD — Power supply (1.2V) |
| دبوس E8 | A8 — Address input 8 |
| دبوس E9 | A9 — Address input 9 |
| دبوس E10 | VSS — Ground |
| دبوس E11 | A10/AP — Address input 10 / auto precharge |
| دبوس E12 | A11 — Address input 11 |
| دبوس F1 | VSS — Ground |
| دبوس F2 | A12 — Address input 12 |
| دبوس F3 | A13 — Address input 13 |
| دبوس F4 | VDD — Power supply (1.2V) |
| دبوس F5 | A14 — Address input 14 |
| دبوس F6 | A15 — Address input 15 |
| دبوس F7 | VSS — Ground |
| دبوس F8 | BA0 — Bank address 0 |
| دبوس F9 | BA1 — Bank address 1 |
| دبوس F10 | VDD — Power supply (1.2V) |
| دبوس F11 | BA2 — Bank address 2 |
| دبوس F12 | BG0 — Bank group 0 |
| دبوس G1 | VDD — Power supply (1.2V) |
| دبوس G2 | BG1 — Bank group 1 |
| دبوس G3 | CK — Clock input |
| دبوس G4 | CK# — Clock input complement |
| دبوس G5 | VSS — Ground |
| دبوس G6 | CKE — Clock enable |
| دبوس G7 | VDD — Power supply (1.2V) |
| دبوس G8 | CS# — Chip select |
| دبوس G9 | RAS# — Row address strobe |
| دبوس G10 | VSS — Ground |
| دبوس G11 | CAS# — Column address strobe |
| دبوس G12 | WE# — Write enable |
| دبوس H1 | VSS — Ground |
| دبوس H2 | ODT0 — On-die termination 0 |
| دبوس H3 | ODT1 — On-die termination 1 |
| دبوس H4 | VDD — Power supply (1.2V) |
| دبوس H5 | RESET# — Asynchronous reset |
| دبوس H6 | VSS — Ground |
| دبوس H7 | VDD — Power supply (1.2V) |
| دبوس H8 | ZQ — ZQ calibration |
| دبوس H9 | VSS — Ground |
| دبوس H10 | VDD — Power supply (1.2V) |
| دبوس H11 | VSS — Ground |
| دبوس H12 | VDD — Power supply (1.2V) |
التطبيقات النموذجية
H5AN8G6NDJR مناسب لـ 6 التطبيقs: Server Main Memory, Networking Equipment, Industrial Control Systems, High-Performance Computing, Embedded Systems, Data Center Storage.
Server Main Memory
The H5AN8G6NDJR provides 8Gb density and 3200 Mbps bandwidth, making it ideal for server main memory. Its high speed and low power (1.2V) enhance server performance and energy efficiency. In a server DIMM, multiple devices are combined to achieve the desired capacity and ECC support. The x16 organization allows for high bandwidth per chip, reducing the number of devices needed for a given capacity. The device's auto self-refresh and dynamic ODT features improve signal integrity and reliability in multi-rank configurations. When designing server memory, ensure proper termination and layout to maintain signal integrity at 3200 Mbps.
موصى به
Networking Equipment
In networking equipment such as routers and switches, the H5AN8G6NDJR provides high-bandwidth memory for packet buffering and forwarding tables. Its 3200 Mbps data rate ensures fast processing of network traffic, while the 1.2V supply reduces power consumption in always-on equipment. The device's CRC feature enhances data integrity, critical for network reliability. The compact FBGA-96 package allows for dense PCB layouts, saving board space. When used in networking designs, consider the thermal environment and ensure adequate cooling to maintain the 0°C to 85°C operating range.
موصى به
Industrial Control Systems
The H5AN8G6NDJR is suitable for industrial control systems requiring reliable, high-density memory. Its wide operating temperature range (0°C to 85°C) and features like auto self-refresh and write leveling ensure stable operation in harsh environments. The device's low power consumption is beneficial for systems with limited power budgets. In industrial applications, the memory is often used for data logging, real-time control, and HMI interfaces. The FBGA-96 package is robust and suitable for vibration-prone environments. Designers should ensure proper power decoupling and follow layout guidelines to minimize noise.
موصى به
High-Performance Computing
In HPC systems, the H5AN8G6NDJR delivers the high bandwidth and capacity needed for complex simulations and data analysis. Its 3200 Mbps data rate and 8Gb density enable large memory pools with fast access times. The device's low latency and high throughput are critical for parallel processing workloads. The x16 organization allows for efficient memory channel utilization. When designing HPC memory subsystems, consider the total memory bandwidth and capacity requirements, and ensure the memory controller supports the device's timing parameters.
موصى به
Embedded Systems
The H5AN8G6NDJR is used in embedded systems requiring high-density memory with low power consumption. Its 1.2V supply and auto self-refresh feature help extend battery life in portable devices. The compact FBGA-96 package is ideal for space-constrained designs. The device's features like data mask and write leveling support reliable operation in embedded applications. When integrating this memory, ensure the host processor's memory controller is compatible with DDR4-3200 and the x16 organization.
موصى به
Data Center Storage
In data center storage systems, the H5AN8G6NDJR provides high-speed memory for caching and metadata management. Its high bandwidth and low latency improve storage performance, while the 1.2V supply reduces power consumption in large-scale deployments. The device's CRC feature ensures data integrity, critical for storage reliability. The FBGA-96 package allows for high-density memory modules, maximizing storage capacity per server. When designing storage systems, consider the memory requirements for caching algorithms and ensure adequate cooling.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ H5AN8G6NDJR — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | H5AN8G6NDJR-XNC | K4A8G165WB-BCTD | MT40A512M16TB-062E:R |
|---|---|---|---|---|
| Package | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) |
| Brand | SK hynix | SK hynix | Samsung | Micron |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
أبرز الفروقات
- High density and bandwidth (مقابلK4A8G165WB-BCTD)
- Advanced features (مقابلMT40A512M16TB-062E:R)
- Low power consumption (مقابلK4A8G165WB-BCTD)
ملاحظات التصميم
For DDR4-3200 operation, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/control signals. Use ground planes beneath the memory device to minimize noise. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the SK hynix datasheet for signal integrity.
The H5AN8G6NDJR operates up to 85°C. In high-density systems, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The FBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For high-power applications, consider thermal vias under the package.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for correct impedance calibration. Do not leave the RESET# pin floating; tie it high during normal operation. Verify that the memory controller supports DDR4-3200 and the x16 organization. Incorrect termination or missing ZQ resistor can cause signal integrity issues.
معلومات الامتثال
RoHS compliant per LCSC and JLCPCB listings. Other compliance data not specified in verified sources.
