H5AN8G6NDJR vs IS43QR16512B-062AABL Perbandingan
Perbandingan bersamaan detil H5AN8G6NDJR dari SK hynix dan IS43QR16512B-062AABL dari ISSI, Integrated Silicon Solution Inc. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
ISSI, Integrated Silicon Solution Inc
IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI
IS43QR16512B-062AABL ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | H5AN8G6NDJR | IS43QR16512B-062AABL |
|---|---|---|
| Merek | SK hynix | ISSI, Integrated Silicon Solution Inc |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Laju Data | 3200 Mbps (DDR4-3200) | 3200 MT/s |
| Tegangan Pemuat | 1.2 V | 1.2 V |
| Paket | 96-ball FBGA (13mm x 7.5mm) | 96-TWBGA (7.5x13.5 mm) |
| Number of Terminals | 96 | — |
| Maximum Supply Voltage (Vsup) | 1.26 V | — |
| Maximum Operating Temperature | 85 °C | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Latensi CAS | 22 cycles (at 3200 Mbps) | 22-22-22 |
| Access Mode | Multi Bank Page Burst | — |
| JESD-30 Code | R-PBGA-B96 | — |
| RoHS | Compliant | Compliant |
| Fitur | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling | — |
| Ukuran Memori | — | 8 Gbit |
| tRCD | — | 19 ns |
| Suhu Kerja | — | 0°C to +95°C (case) |
| Tipe Mounting | — | Surface Mount |
| Jumlah Pin | — | 96 |
| Antarmuka | — | POD (Pseudo Open Drain) |
| Clock Frequency | — | 1.6 GHz |
| Lebar Bus Data | — | 16 bit |