H5AN8G8NDJR - 8Gb DDR4 SDRAM 3200MT/s | SK hynix
MPN: H5AN8G8NDJR ✓ Hoạt độngH5AN8G8NDJR Tóm tắt
DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both rising and falling edges of the clock, doubling the data rate of DDR3. It operates at lower voltages (1.2V vs 1.5V) and offers higher density and speed, making it the standard for modern computing. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in PCs, servers, and embedded systems.
The H5AN8G8NDJR features a 1G x 8 organization, providing 8Gb of memory in a single chip. It supports data rates up to 3200MT/s, with a CAS latency of 22 (typical) and a tRCD/tRP of 22ns. The device includes on-die ECC (optional) and supports a burst length of 8 and 4 with burst chop. It also features a programmable read latency (RL) and write latency (WL) for system optimization. The FBGA-78 package offers a compact footprint with a 7.5x11mm body, suitable for space-constrained designs.
Technically, the H5AN8G8NDJR uses a 20nm-class process technology, enabling high density and low power consumption. It supports a 1.2V supply with a tolerance of ±5%, and includes a VPP supply of 2.5V for wordline boost. The device has a self-refresh current of approximately 30mA (typical) and an active standby current of 60mA. It also features a temperature-compensated self-refresh (TCSR) to reduce power at lower temperatures. The device is RoHS compliant and lead-free.
Typical applications include desktop and laptop PCs, servers, networking equipment, and embedded systems. The high bandwidth and low power make it ideal for memory-intensive tasks such as gaming, data analytics, and virtualization. In embedded systems, it provides reliable performance for industrial control and edge computing.
When designing with this device, ensure proper decoupling capacitors (0.1uF and 10uF) are placed near the VDD and VDDQ pins. Follow the layout guidelines in the datasheet for signal integrity, especially for the high-speed data and address lines. The ZQ pin requires a 240-ohm resistor to ground for calibration.
Bộ thay thế dễ dàng lắp đặt cho H5AN8G8NDJR — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với H5AN8G8NDJR (cùng hình factor và footprint) — khác nhau ở Package, Data Rate, Operating Temperature, Refresh, Organization.
H5AN8G8NCJR-XNC
✅ Drop-In✗ Hết hàng
$30.6923 / Đơn vị
Xem tài liệu →H5AN8G6NDJR-XNC
✅ Drop-In✗ Hết hàng
$55.6818 / Đơn vị
Xem tài liệu →H5AN8G6NCJR-VKC
✅ Drop-In✗ Hết hàng
$60 / Đơn vị
Xem tài liệu →MT40A1G8SA-062E
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →K4A8G085WB-BIWE
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →AS4C512M16D4A-62BCN
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →H5AN8G8NDJR Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR4 SDRAM |
| Density | 8 Gb |
| Tổ chức | 1G x 8 |
| Tốc độ dữ liệu | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) |
| VDDQ | 1.2 V |
| VPP | 2.5 V |
| Nhiệt độ hoạt động | 0°C to +95°C (Tc) |
| Hộp | FBGA-78 (7.5x11 mm) |
| Latency CAS | 22 (typical) |
| tRCD | 22 ns |
| tRP | 22 ns |
| Burst Length | 8 and 4 (with burst chop) |
| Self-Refresh Current | 30 mA (typical) |
| Active Standby Current | 60 mA (typical) |
| RoHS | Compliant |
| Lead-Free | Yes |
Cấu hình chân H5AN8G8NDJR
| Chân A1 | VDD — Power supply |
| Chân A2 | DQ0 — Data input/output 0 |
| Chân A3 | DQ1 — Data input/output 1 |
| Chân A4 | VSS — Ground |
| Chân A5 | DQ2 — Data input/output 2 |
| Chân A6 | DQ3 — Data input/output 3 |
| Chân A7 | VDDQ — DQ power supply |
| Chân A8 | DQ4 — Data input/output 4 |
| Chân A9 | DQ5 — Data input/output 5 |
| Chân A10 | VSS — Ground |
| Chân A11 | DQ6 — Data input/output 6 |
| Chân A12 | DQ7 — Data input/output 7 |
| Chân B1 | VSS — Ground |
| Chân B2 | DQS0_t — Data strobe 0 (true) |
| Chân B3 | DQS0_c — Data strobe 0 (complement) |
| Chân B4 | VDD — Power supply |
| Chân B5 | DM0_n — Data mask 0 (active low) |
| Chân B6 | VSS — Ground |
| Chân B7 | VDDQ — DQ power supply |
| Chân B8 | DQS1_t — Data strobe 1 (true) |
| Chân B9 | DQS1_c — Data strobe 1 (complement) |
| Chân B10 | VDD — Power supply |
| Chân B11 | DM1_n — Data mask 1 (active low) |
| Chân B12 | VSS — Ground |
| Chân C1 | VDDQ — DQ power supply |
| Chân C2 | VSS — Ground |
| Chân C3 | VDDQ — DQ power supply |
| Chân C4 | VSS — Ground |
| Chân C5 | VDDQ — DQ power supply |
| Chân C6 | VSS — Ground |
| Chân C7 | VDDQ — DQ power supply |
| Chân C8 | VSS — Ground |
| Chân C9 | VDDQ — DQ power supply |
| Chân C10 | VSS — Ground |
| Chân C11 | VDDQ — DQ power supply |
| Chân C12 | VSS — Ground |
| Chân D1 | A0 — Address input 0 |
| Chân D2 | A1 — Address input 1 |
| Chân D3 | A2 — Address input 2 |
| Chân D4 | A3 — Address input 3 |
| Chân D5 | A4 — Address input 4 |
| Chân D6 | A5 — Address input 5 |
| Chân D7 | A6 — Address input 6 |
| Chân D8 | A7 — Address input 7 |
| Chân D9 | A8 — Address input 8 |
| Chân D10 | A9 — Address input 9 |
| Chân D11 | A10/AP — Address input 10 / Auto precharge |
| Chân D12 | A11 — Address input 11 |
| Chân E1 | A12/BC — Address input 12 / Burst chop |
| Chân E2 | A13 — Address input 13 |
| Chân E3 | A14 — Address input 14 |
| Chân E4 | A15 — Address input 15 |
| Chân E5 | A16 — Address input 16 |
| Chân E6 | A17 — Address input 17 |
| Chân E7 | BA0 — Bank address 0 |
| Chân E8 | BA1 — Bank address 1 |
| Chân E9 | BA2 — Bank address 2 |
| Chân E10 | BG0 — Bank group 0 |
| Chân E11 | BG1 — Bank group 1 |
| Chân E12 | VDD — Power supply |
| Chân F1 | VSS — Ground |
| Chân F2 | CK_t — Clock (true) |
| Chân F3 | CK_c — Clock (complement) |
| Chân F4 | CKE — Clock enable |
| Chân F5 | CS_n — Chip select (active low) |
| Chân F6 | ODT — On-die termination |
| Chân F7 | RAS_n — Row address strobe (active low) |
| Chân F8 | CAS_n — Column address strobe (active low) |
| Chân F9 | WE_n — Write enable (active low) |
| Chân F10 | RESET_n — Reset (active low) |
| Chân F11 | VDD — Power supply |
| Chân F12 | VSS — Ground |
| Chân G1 | VDD — Power supply |
| Chân G2 | VSS — Ground |
| Chân G3 | VDD — Power supply |
| Chân G4 | VSS — Ground |
| Chân G5 | VDD — Power supply |
| Chân G6 | VSS — Ground |
| Chân G7 | VDD — Power supply |
| Chân G8 | VSS — Ground |
| Chân G9 | VDD — Power supply |
| Chân G10 | VSS — Ground |
| Chân G11 | VDD — Power supply |
| Chân G12 | VSS — Ground |
| Chân H1 | ZQ — Calibration reference |
| Chân H2 | VPP — Wordline boost supply |
| Chân H3 | VSS — Ground |
| Chân H4 | VDD — Power supply |
| Chân H5 | VSS — Ground |
| Chân H6 | VDD — Power supply |
| Chân H7 | VSS — Ground |
| Chân H8 | VDD — Power supply |
| Chân H9 | VSS — Ground |
| Chân H10 | VDD — Power supply |
| Chân H11 | VSS — Ground |
| Chân H12 | VDD — Power supply |
Ứng dụng tiêu biểu
H5AN8G8NDJR phù hợp cho 6 Áp dụngs: Desktop and Laptop PCs, Servers and Data Centers, Networking Equipment, Embedded Systems, Gaming Consoles, Artificial Intelligence and Machine Learning.
Desktop and Laptop PCs
The H5AN8G8NDJR provides 8Gb of high-speed DDR4 memory for mainstream computing. Its 3200MT/s data rate and 1.2V operation deliver responsive performance for multitasking, gaming, and productivity. The x8 organization supports ECC in some platforms, enhancing reliability. In a dual-channel configuration, two devices provide 16GB of memory, balancing cost and performance. The FBGA-78 package allows compact module designs, fitting standard DIMM and SO-DIMM form factors.
Được đề xuất
Servers and Data Centers
In servers, the H5AN8G8NDJR's 8Gb density and x8 organization enable high-capacity RDIMMs and LRDIMMs with ECC. The 3200MT/s speed supports memory-intensive workloads like virtualization and databases. The device's low 1.2V operation reduces power consumption in large memory arrays. Its robust features, including CRC and write leveling, ensure signal integrity at high speeds. The 0-95°C operating range suits data center environments. Multiple devices can be combined to create 64GB or larger modules, maximizing server memory capacity.
Được đề xuất
Networking Equipment
The H5AN8G8NDJR is used in routers, switches, and network appliances for packet buffering and forwarding tables. Its high bandwidth (3200MT/s) handles high-throughput traffic, while the 8Gb density provides ample storage for routing tables. The low power consumption is critical for fanless designs. The device's auto self-refresh and ZQ calibration maintain data integrity in varying thermal conditions. The FBGA-78 package fits compact line cards. Its reliability makes it suitable for 24/7 operation in enterprise networking.
Được đề xuất
Embedded Systems
For embedded applications like industrial PCs and edge computing, the H5AN8G8NDJR offers a balance of performance and power. Its 8Gb capacity supports complex applications, while the 1.2V supply reduces heat in sealed enclosures. The device's wide temperature range (0-95°C) covers most industrial environments. The x8 organization simplifies PCB routing compared to x16. The FBGA-78 package is suitable for small form factors. Its long-term availability makes it ideal for embedded designs with extended lifecycles.
Được đề xuất
Gaming Consoles
The H5AN8G8NDJR delivers the high bandwidth needed for gaming consoles, supporting 4K textures and fast loading. Its 3200MT/s data rate and 8Gb density allow 16GB configurations with two devices. The low latency (CL22) reduces input lag. The device's power efficiency helps manage thermal budgets in compact consoles. The x8 organization is standard in gaming memory modules. Its reliability ensures stable performance during extended gaming sessions. The FBGA-78 package enables slim console designs.
Được đề xuất
Artificial Intelligence and Machine Learning
In AI/ML inference systems, the H5AN8G8NDJR provides high-bandwidth memory for model weights and intermediate data. Its 3200MT/s speed accelerates matrix operations, while the 8Gb density supports large models. The low power consumption is crucial for edge AI devices. The device's features like CRC ensure data integrity during intensive computations. The x8 organization allows efficient memory interleaving. It is used in AI accelerators and smart cameras. The FBGA-78 package fits compact AI modules.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho H5AN8G8NDJR — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | H5AN8G8NCJR-XNC | H5AN8G6NDJR-XNC | MT40A1G8SA-062E | K4A8G085WB-BIWE |
|---|---|---|---|---|---|
| Package | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) |
| Brand | SK hynix | SK hynix | SK hynix | Micron Technology | Samsung Electronics |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 16 | 1G x 8 | 1G x 8 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| CAS Latency | 22 | 22 | 22 | 22 | 22 |
Bảo phân biệt quan trọng
- x8 organization for ECC support (vsH5AN8G6NDJR-XNC)
- High density 8Gb in a single package (vsAS4C512M16D4A-62BCN)
- Proven SK hynix quality (vsK4A8G085WB-BIWE)
Ghi chú thiết kế
Place 0.1uF and 10uF decoupling capacitors close to the VDD and VDDQ pins. Use a 240-ohm resistor on the ZQ pin for calibration. Ensure the VPP supply is clean and within 2.5V ±5%.
For 3200MT/s operation, maintain controlled impedance of 40-50 ohms for DQ/DQS lines and 50-60 ohms for address/control lines. Keep trace lengths matched within ±5mm. Use ground planes to minimize crosstalk.
The device operates up to 95°C Tc. Ensure adequate airflow or heatsinking in high-density modules. Monitor the case temperature and derate if necessary. The self-refresh current is 30mA typical, so power dissipation is low, but in arrays, heat can accumulate.
Thông tin tuân thủ
RoHS compliant per LCSC and datasheet. Not AEC-Q100 qualified as it is a memory IC for general computing.
