H5AN8G8NDJR - 8Gb DDR4 SDRAM 3200MT/s | SK hynix
MPN: H5AN8G8NDJR ✓ نشطH5AN8G8NDJR نظرة عامة
DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both rising and falling edges of the clock, doubling the data rate of DDR3. It operates at lower voltages (1.2V vs 1.5V) and offers higher density and speed, making it the standard for modern computing. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in PCs, servers, and embedded systems.
The H5AN8G8NDJR features a 1G x 8 organization, providing 8Gb of memory in a single chip. It supports data rates up to 3200MT/s, with a CAS latency of 22 (typical) and a tRCD/tRP of 22ns. The device includes on-die ECC (optional) and supports a burst length of 8 and 4 with burst chop. It also features a programmable read latency (RL) and write latency (WL) for system optimization. The FBGA-78 package offers a compact footprint with a 7.5x11mm body, suitable for space-constrained designs.
Technically, the H5AN8G8NDJR uses a 20nm-class process technology, enabling high density and low power consumption. It supports a 1.2V supply with a tolerance of ±5%, and includes a VPP supply of 2.5V for wordline boost. The device has a self-refresh current of approximately 30mA (typical) and an active standby current of 60mA. It also features a temperature-compensated self-refresh (TCSR) to reduce power at lower temperatures. The device is RoHS compliant and lead-free.
Typical applications include desktop and laptop PCs, servers, networking equipment, and embedded systems. The high bandwidth and low power make it ideal for memory-intensive tasks such as gaming, data analytics, and virtualization. In embedded systems, it provides reliable performance for industrial control and edge computing.
When designing with this device, ensure proper decoupling capacitors (0.1uF and 10uF) are placed near the VDD and VDDQ pins. Follow the layout guidelines in the datasheet for signal integrity, especially for the high-speed data and address lines. The ZQ pin requires a 240-ohm resistor to ground for calibration.
بدائل مباشرة لـ H5AN8G8NDJR — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع H5AN8G8NDJR (نفس عامل الشكل والبصمة) — يختلف في Package, Data Rate, Operating Temperature, Refresh, Organization.
H5AN8G8NCJR-XNC
✅ بديل مباشر✗ غير متوفر
$30.6923 / وحدة
عرض ورقة البيانات ←H5AN8G6NDJR-XNC
✅ بديل مباشر✗ غير متوفر
$55.6818 / وحدة
عرض ورقة البيانات ←H5AN8G6NCJR-VKC
✅ بديل مباشر✗ غير متوفر
$60 / وحدة
عرض ورقة البيانات ←MT40A1G8SA-062E
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←K4A8G085WB-BIWE
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←AS4C512M16D4A-62BCN
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←H5AN8G8NDJR الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR4 SDRAM |
| Density | 8 Gb |
| التنظيم | 1G x 8 |
| معدل البيانات | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) |
| VDDQ | 1.2 V |
| VPP | 2.5 V |
| درجة حرارة التشغيل | 0°C to +95°C (Tc) |
| العلبة | FBGA-78 (7.5x11 mm) |
| زمن الوصول CAS | 22 (typical) |
| tRCD | 22 ns |
| tRP | 22 ns |
| Burst Length | 8 and 4 (with burst chop) |
| Self-Refresh Current | 30 mA (typical) |
| Active Standby Current | 60 mA (typical) |
| RoHS | Compliant |
| Lead-Free | Yes |
تكوين أطراف H5AN8G8NDJR
| دبوس A1 | VDD — Power supply |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس A4 | VSS — Ground |
| دبوس A5 | DQ2 — Data input/output 2 |
| دبوس A6 | DQ3 — Data input/output 3 |
| دبوس A7 | VDDQ — DQ power supply |
| دبوس A8 | DQ4 — Data input/output 4 |
| دبوس A9 | DQ5 — Data input/output 5 |
| دبوس A10 | VSS — Ground |
| دبوس A11 | DQ6 — Data input/output 6 |
| دبوس A12 | DQ7 — Data input/output 7 |
| دبوس B1 | VSS — Ground |
| دبوس B2 | DQS0_t — Data strobe 0 (true) |
| دبوس B3 | DQS0_c — Data strobe 0 (complement) |
| دبوس B4 | VDD — Power supply |
| دبوس B5 | DM0_n — Data mask 0 (active low) |
| دبوس B6 | VSS — Ground |
| دبوس B7 | VDDQ — DQ power supply |
| دبوس B8 | DQS1_t — Data strobe 1 (true) |
| دبوس B9 | DQS1_c — Data strobe 1 (complement) |
| دبوس B10 | VDD — Power supply |
| دبوس B11 | DM1_n — Data mask 1 (active low) |
| دبوس B12 | VSS — Ground |
| دبوس C1 | VDDQ — DQ power supply |
| دبوس C2 | VSS — Ground |
| دبوس C3 | VDDQ — DQ power supply |
| دبوس C4 | VSS — Ground |
| دبوس C5 | VDDQ — DQ power supply |
| دبوس C6 | VSS — Ground |
| دبوس C7 | VDDQ — DQ power supply |
| دبوس C8 | VSS — Ground |
| دبوس C9 | VDDQ — DQ power supply |
| دبوس C10 | VSS — Ground |
| دبوس C11 | VDDQ — DQ power supply |
| دبوس C12 | VSS — Ground |
| دبوس D1 | A0 — Address input 0 |
| دبوس D2 | A1 — Address input 1 |
| دبوس D3 | A2 — Address input 2 |
| دبوس D4 | A3 — Address input 3 |
| دبوس D5 | A4 — Address input 4 |
| دبوس D6 | A5 — Address input 5 |
| دبوس D7 | A6 — Address input 6 |
| دبوس D8 | A7 — Address input 7 |
| دبوس D9 | A8 — Address input 8 |
| دبوس D10 | A9 — Address input 9 |
| دبوس D11 | A10/AP — Address input 10 / Auto precharge |
| دبوس D12 | A11 — Address input 11 |
| دبوس E1 | A12/BC — Address input 12 / Burst chop |
| دبوس E2 | A13 — Address input 13 |
| دبوس E3 | A14 — Address input 14 |
| دبوس E4 | A15 — Address input 15 |
| دبوس E5 | A16 — Address input 16 |
| دبوس E6 | A17 — Address input 17 |
| دبوس E7 | BA0 — Bank address 0 |
| دبوس E8 | BA1 — Bank address 1 |
| دبوس E9 | BA2 — Bank address 2 |
| دبوس E10 | BG0 — Bank group 0 |
| دبوس E11 | BG1 — Bank group 1 |
| دبوس E12 | VDD — Power supply |
| دبوس F1 | VSS — Ground |
| دبوس F2 | CK_t — Clock (true) |
| دبوس F3 | CK_c — Clock (complement) |
| دبوس F4 | CKE — Clock enable |
| دبوس F5 | CS_n — Chip select (active low) |
| دبوس F6 | ODT — On-die termination |
| دبوس F7 | RAS_n — Row address strobe (active low) |
| دبوس F8 | CAS_n — Column address strobe (active low) |
| دبوس F9 | WE_n — Write enable (active low) |
| دبوس F10 | RESET_n — Reset (active low) |
| دبوس F11 | VDD — Power supply |
| دبوس F12 | VSS — Ground |
| دبوس G1 | VDD — Power supply |
| دبوس G2 | VSS — Ground |
| دبوس G3 | VDD — Power supply |
| دبوس G4 | VSS — Ground |
| دبوس G5 | VDD — Power supply |
| دبوس G6 | VSS — Ground |
| دبوس G7 | VDD — Power supply |
| دبوس G8 | VSS — Ground |
| دبوس G9 | VDD — Power supply |
| دبوس G10 | VSS — Ground |
| دبوس G11 | VDD — Power supply |
| دبوس G12 | VSS — Ground |
| دبوس H1 | ZQ — Calibration reference |
| دبوس H2 | VPP — Wordline boost supply |
| دبوس H3 | VSS — Ground |
| دبوس H4 | VDD — Power supply |
| دبوس H5 | VSS — Ground |
| دبوس H6 | VDD — Power supply |
| دبوس H7 | VSS — Ground |
| دبوس H8 | VDD — Power supply |
| دبوس H9 | VSS — Ground |
| دبوس H10 | VDD — Power supply |
| دبوس H11 | VSS — Ground |
| دبوس H12 | VDD — Power supply |
التطبيقات النموذجية
H5AN8G8NDJR مناسب لـ 6 التطبيقs: Desktop and Laptop PCs, Servers and Data Centers, Networking Equipment, Embedded Systems, Gaming Consoles, Artificial Intelligence and Machine Learning.
Desktop and Laptop PCs
The H5AN8G8NDJR provides 8Gb of high-speed DDR4 memory for mainstream computing. Its 3200MT/s data rate and 1.2V operation deliver responsive performance for multitasking, gaming, and productivity. The x8 organization supports ECC in some platforms, enhancing reliability. In a dual-channel configuration, two devices provide 16GB of memory, balancing cost and performance. The FBGA-78 package allows compact module designs, fitting standard DIMM and SO-DIMM form factors.
موصى به
Servers and Data Centers
In servers, the H5AN8G8NDJR's 8Gb density and x8 organization enable high-capacity RDIMMs and LRDIMMs with ECC. The 3200MT/s speed supports memory-intensive workloads like virtualization and databases. The device's low 1.2V operation reduces power consumption in large memory arrays. Its robust features, including CRC and write leveling, ensure signal integrity at high speeds. The 0-95°C operating range suits data center environments. Multiple devices can be combined to create 64GB or larger modules, maximizing server memory capacity.
موصى به
Networking Equipment
The H5AN8G8NDJR is used in routers, switches, and network appliances for packet buffering and forwarding tables. Its high bandwidth (3200MT/s) handles high-throughput traffic, while the 8Gb density provides ample storage for routing tables. The low power consumption is critical for fanless designs. The device's auto self-refresh and ZQ calibration maintain data integrity in varying thermal conditions. The FBGA-78 package fits compact line cards. Its reliability makes it suitable for 24/7 operation in enterprise networking.
موصى به
Embedded Systems
For embedded applications like industrial PCs and edge computing, the H5AN8G8NDJR offers a balance of performance and power. Its 8Gb capacity supports complex applications, while the 1.2V supply reduces heat in sealed enclosures. The device's wide temperature range (0-95°C) covers most industrial environments. The x8 organization simplifies PCB routing compared to x16. The FBGA-78 package is suitable for small form factors. Its long-term availability makes it ideal for embedded designs with extended lifecycles.
موصى به
Gaming Consoles
The H5AN8G8NDJR delivers the high bandwidth needed for gaming consoles, supporting 4K textures and fast loading. Its 3200MT/s data rate and 8Gb density allow 16GB configurations with two devices. The low latency (CL22) reduces input lag. The device's power efficiency helps manage thermal budgets in compact consoles. The x8 organization is standard in gaming memory modules. Its reliability ensures stable performance during extended gaming sessions. The FBGA-78 package enables slim console designs.
موصى به
Artificial Intelligence and Machine Learning
In AI/ML inference systems, the H5AN8G8NDJR provides high-bandwidth memory for model weights and intermediate data. Its 3200MT/s speed accelerates matrix operations, while the 8Gb density supports large models. The low power consumption is crucial for edge AI devices. The device's features like CRC ensure data integrity during intensive computations. The x8 organization allows efficient memory interleaving. It is used in AI accelerators and smart cameras. The FBGA-78 package fits compact AI modules.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ H5AN8G8NDJR — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | H5AN8G8NCJR-XNC | H5AN8G6NDJR-XNC | MT40A1G8SA-062E | K4A8G085WB-BIWE |
|---|---|---|---|---|---|
| Package | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) |
| Brand | SK hynix | SK hynix | SK hynix | Micron Technology | Samsung Electronics |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 16 | 1G x 8 | 1G x 8 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| CAS Latency | 22 | 22 | 22 | 22 | 22 |
أبرز الفروقات
- x8 organization for ECC support (مقابلH5AN8G6NDJR-XNC)
- High density 8Gb in a single package (مقابلAS4C512M16D4A-62BCN)
- Proven SK hynix quality (مقابلK4A8G085WB-BIWE)
ملاحظات التصميم
Place 0.1uF and 10uF decoupling capacitors close to the VDD and VDDQ pins. Use a 240-ohm resistor on the ZQ pin for calibration. Ensure the VPP supply is clean and within 2.5V ±5%.
For 3200MT/s operation, maintain controlled impedance of 40-50 ohms for DQ/DQS lines and 50-60 ohms for address/control lines. Keep trace lengths matched within ±5mm. Use ground planes to minimize crosstalk.
The device operates up to 95°C Tc. Ensure adequate airflow or heatsinking in high-density modules. Monitor the case temperature and derate if necessary. The self-refresh current is 30mA typical, so power dissipation is low, but in arrays, heat can accumulate.
معلومات الامتثال
RoHS compliant per LCSC and datasheet. Not AEC-Q100 qualified as it is a memory IC for general computing.
