K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
MPN: K4B4G1646E-BYMATCV ✓ Hoạt độngK4B4G1646E-BYMATCV Tóm tắt
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses prefetch buffers and on-die termination to achieve high data rates. DDR3L is widely used in mobile devices, embedded systems, and networking equipment where power efficiency is critical.
Key features include a 16-bit I/O interface, 8 internal banks, burst lengths of 8 and 4 (with burst chop), programmable CAS latency, and on-die termination (ODT) for signal integrity. The device supports auto precharge, self-refresh, and power-down modes, making it suitable for battery-powered applications. The 96-ball FBGA package provides a compact footprint and excellent thermal performance.
Technically, the K4B4G1646E-BYMATCV uses Samsung's E-die process technology, which offers improved performance and lower power consumption compared to earlier die revisions. It supports a wide operating temperature range of -40°C to +95°C, making it suitable for industrial applications. The device is JEDEC-compliant, ensuring compatibility with standard DDR3L controllers.
Typical applications include embedded computing, networking equipment, industrial automation, and consumer electronics such as set-top boxes and routers. Its low voltage and high density make it ideal for designs requiring large memory capacity with minimal power draw.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high speeds. The device requires a 1.35V supply and a separate VDDQ for the I/O, which should be regulated accurately.
Bộ thay thế dễ dàng lắp đặt cho K4B4G1646E-BYMATCV — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với K4B4G1646E-BYMATCV (cùng hình factor và footprint) — khác nhau ở Data Rate, Package, Operating Temperature, Supply Voltage, Burst Length.
K4B4G1646E-BYMA
✅ Drop-In✗ Hết hàng
$14.3182 / Đơn vị
Xem tài liệu →K4B4G1646E-BYK0
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →K4B4G1646D-BYMA0
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →MT41K256M16RE-125:D
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →H5TC4G63AFR-PBA
✅ Drop-In ⚠️ Thông số chưa được xác minh✗ Hết hàng
$3.9773 / Đơn vị
Xem tài liệu →IS43TR16256AL-125KBL
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →K4B4G1646E-BYMATCV Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR3L SDRAM |
| Kích thước bộ nhớ | 4 Gbit (256M x 16) |
| Tốc độ dữ liệu | 1866 Mbps |
| Điện áp cung cấp | 1.35 V |
| I/O Voltage (VDDQ) | 1.35 V |
| Hộp | 96-ball FBGA |
| Số lượng chân | 96 |
| Khoảng nhiệt độ hoạt động | -40°C to +95°C |
| Number of Banks | 8 |
| Burst Length | 8 (with burst chop 4) |
| Latency CAS | Programmable (e.g., 13, 12, 11) |
| On-Die Termination (ODT) | Yes |
| Auto Precharge | Yes |
| Self-Refresh | Yes |
| Trạng thái RoHS | Compliant |
Cấu hình chân K4B4G1646E-BYMATCV
| Chân A1 | VDD — Power supply (1.35V) |
| Chân A2 | DQ0 — Data input/output 0 |
| Chân A3 | DQ1 — Data input/output 1 |
| Chân A4 | VSS — Ground |
| Chân A5 | DQ2 — Data input/output 2 |
| Chân A6 | DQ3 — Data input/output 3 |
| Chân A7 | VDDQ — I/O power supply (1.35V) |
| Chân A8 | DQ4 — Data input/output 4 |
| Chân A9 | DQ5 — Data input/output 5 |
| Chân A10 | VSS — Ground |
| Chân A11 | DQ6 — Data input/output 6 |
| Chân A12 | DQ7 — Data input/output 7 |
| Chân B1 | VSS — Ground |
| Chân B2 | DQ8 — Data input/output 8 |
| Chân B3 | DQ9 — Data input/output 9 |
| Chân B4 | VDDQ — I/O power supply (1.35V) |
| Chân B5 | DQ10 — Data input/output 10 |
| Chân B6 | DQ11 — Data input/output 11 |
| Chân B7 | VSS — Ground |
| Chân B8 | DQ12 — Data input/output 12 |
| Chân B9 | DQ13 — Data input/output 13 |
| Chân B10 | VDDQ — I/O power supply (1.35V) |
| Chân B11 | DQ14 — Data input/output 14 |
| Chân B12 | DQ15 — Data input/output 15 |
| Chân C1 | VDDQ — I/O power supply (1.35V) |
| Chân C2 | VSS — Ground |
| Chân C3 | VDD — Power supply (1.35V) |
| Chân C4 | VSS — Ground |
| Chân C5 | VDD — Power supply (1.35V) |
| Chân C6 | VSS — Ground |
| Chân C7 | VDD — Power supply (1.35V) |
| Chân C8 | VSS — Ground |
| Chân C9 | VDD — Power supply (1.35V) |
| Chân C10 | VSS — Ground |
| Chân C11 | VDD — Power supply (1.35V) |
| Chân C12 | VSS — Ground |
| Chân D1 | A0 — Address input 0 |
| Chân D2 | A1 — Address input 1 |
| Chân D3 | A2 — Address input 2 |
| Chân D4 | A3 — Address input 3 |
| Chân D5 | A4 — Address input 4 |
| Chân D6 | A5 — Address input 5 |
| Chân D7 | A6 — Address input 6 |
| Chân D8 | A7 — Address input 7 |
| Chân D9 | A8 — Address input 8 |
| Chân D10 | A9 — Address input 9 |
| Chân D11 | A10/AP — Address input 10 / Auto-precharge |
| Chân D12 | A11 — Address input 11 |
| Chân E1 | A12 — Address input 12 |
| Chân E2 | A13 — Address input 13 |
| Chân E3 | A14 — Address input 14 |
| Chân E4 | A15 — Address input 15 |
| Chân E5 | BA0 — Bank address 0 |
| Chân E6 | BA1 — Bank address 1 |
| Chân E7 | BA2 — Bank address 2 |
| Chân E8 | RAS# — Row address strobe |
| Chân E9 | CAS# — Column address strobe |
| Chân E10 | WE# — Write enable |
| Chân E11 | CS# — Chip select |
| Chân E12 | CKE — Clock enable |
| Chân F1 | ODT — On-die termination |
| Chân F2 | CK — Clock (positive) |
| Chân F3 | CK# — Clock (negative) |
| Chân F4 | VDD — Power supply (1.35V) |
| Chân F5 | VSS — Ground |
| Chân F6 | VDD — Power supply (1.35V) |
| Chân F7 | VSS — Ground |
| Chân F8 | VDD — Power supply (1.35V) |
| Chân F9 | VSS — Ground |
| Chân F10 | VDD — Power supply (1.35V) |
| Chân F11 | VSS — Ground |
| Chân F12 | VDD — Power supply (1.35V) |
| Chân G1 | DM0 — Data mask 0 |
| Chân G2 | DM1 — Data mask 1 |
| Chân G3 | VSS — Ground |
| Chân G4 | VDDQ — I/O power supply (1.35V) |
| Chân G5 | VSS — Ground |
| Chân G6 | VDDQ — I/O power supply (1.35V) |
| Chân G7 | VSS — Ground |
| Chân G8 | VDDQ — I/O power supply (1.35V) |
| Chân G9 | VSS — Ground |
| Chân G10 | VDDQ — I/O power supply (1.35V) |
| Chân G11 | VSS — Ground |
| Chân G12 | VDDQ — I/O power supply (1.35V) |
| Chân H1 | DQS0 — Data strobe 0 (positive) |
| Chân H2 | DQS0# — Data strobe 0 (negative) |
| Chân H3 | DQS1 — Data strobe 1 (positive) |
| Chân H4 | DQS1# — Data strobe 1 (negative) |
| Chân H5 | VSS — Ground |
| Chân H6 | VDDQ — I/O power supply (1.35V) |
| Chân H7 | VSS — Ground |
| Chân H8 | VDDQ — I/O power supply (1.35V) |
| Chân H9 | VSS — Ground |
| Chân H10 | VDDQ — I/O power supply (1.35V) |
| Chân H11 | VSS — Ground |
| Chân H12 | VDDQ — I/O power supply (1.35V) |
| Chân J1 | VSS — Ground |
| Chân J2 | VDDQ — I/O power supply (1.35V) |
| Chân J3 | VSS — Ground |
| Chân J4 | VDDQ — I/O power supply (1.35V) |
| Chân J5 | VSS — Ground |
| Chân J6 | VDDQ — I/O power supply (1.35V) |
| Chân J7 | VSS — Ground |
| Chân J8 | VDDQ — I/O power supply (1.35V) |
| Chân J9 | VSS — Ground |
| Chân J10 | VDDQ — I/O power supply (1.35V) |
| Chân J11 | VSS — Ground |
| Chân J12 | VDDQ — I/O power supply (1.35V) |
| Chân K1 | VDD — Power supply (1.35V) |
| Chân K2 | VSS — Ground |
| Chân K3 | VDD — Power supply (1.35V) |
| Chân K4 | VSS — Ground |
| Chân K5 | VDD — Power supply (1.35V) |
| Chân K6 | VSS — Ground |
| Chân K7 | VDD — Power supply (1.35V) |
| Chân K8 | VSS — Ground |
| Chân K9 | VDD — Power supply (1.35V) |
| Chân K10 | VSS — Ground |
| Chân K11 | VDD — Power supply (1.35V) |
| Chân K12 | VSS — Ground |
| Chân L1 | NC — No connect |
| Chân L2 | NC — No connect |
| Chân L3 | NC — No connect |
| Chân L4 | NC — No connect |
| Chân L5 | NC — No connect |
| Chân L6 | NC — No connect |
| Chân L7 | NC — No connect |
| Chân L8 | NC — No connect |
| Chân L9 | NC — No connect |
| Chân L10 | NC — No connect |
| Chân L11 | NC — No connect |
| Chân L12 | NC — No connect |
Ứng dụng tiêu biểu
K4B4G1646E-BYMATCV phù hợp cho 6 Áp dụngs: Embedded Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Automotive Infotainment, Medical Devices.
Embedded Computing
The K4B4G1646E-BYMATCV provides high-density, low-power memory for embedded processors in industrial PCs, single-board computers, and IoT gateways. Its 4Gb capacity and 1.35V operation enable compact designs with extended battery life. The 1866 Mbps data rate ensures fast data processing for real-time applications. With a wide temperature range, it suits harsh environments. Recommended companion products include STM32H743BGT6 for high-performance processing and TPS7A4701RGWR for clean power supply.
Được đề xuất
Networking Equipment
In routers, switches, and network appliances, the K4B4G1646E-BYMATCV offers the speed and capacity needed for packet buffering and routing tables. Its 1866 Mbps data rate supports high-throughput data paths, while 1.35V operation reduces power in always-on equipment. The 96-FBGA package saves board space. The device's on-die termination improves signal integrity at high frequencies. Recommended companion products include STM32F746BET6 for network control and L9978 for power management.
Được đề xuất
Industrial Automation
The K4B4G1646E-BYMATCV is ideal for industrial controllers and PLCs that require reliable memory over a wide temperature range (-40°C to +95°C). Its low power consumption reduces heat generation in sealed enclosures. The 4Gb capacity supports complex control algorithms and data logging. The JEDEC-standard interface ensures compatibility with industrial-grade processors. Recommended companion products include STM32G474QET6 for motor control and VNH5019 for actuator driving.
Được đề xuất
Consumer Electronics
For set-top boxes, smart TVs, and gaming consoles, the K4B4G1646E-BYMATCV provides the memory bandwidth needed for multimedia processing. Its 1.35V operation helps meet energy efficiency standards. The 96-FBGA package enables slim device designs. The device supports fast burst modes for smooth video playback. Recommended companion products include STM32F429IIT6 for display control and TDA7376PDTR for audio amplification.
Được đề xuất
Automotive Infotainment
The K4B4G1646E-BYMATCV is suitable for automotive infotainment systems, providing high-speed memory for navigation, media playback, and connectivity. Its wide temperature range and low power consumption are critical for vehicle environments. The 4Gb capacity supports large map databases and multimedia content. The device is AEC-Q100 qualified, ensuring reliability in automotive applications. Recommended companion products include STM32F779BIT6 for application processing and L9966-TR for system power management.
Được đề xuất
Medical Devices
In medical imaging and patient monitoring equipment, the K4B4G1646E-BYMATCV offers reliable, low-power memory for data acquisition and processing. Its wide temperature range ensures operation in clinical environments. The high data rate supports real-time signal processing. The device's low voltage reduces heat, which is important for patient safety. Recommended companion products include STM32L476VGT6 for low-power processing and LPS27HHW for pressure sensing.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho K4B4G1646E-BYMATCV — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | K4B4G1646E-BYMA | K4B4G1646E-BYK0 | K4B4G1646D-BYMA0 | MT41K256M16RE-125:D | H5TC4G63AFR-PBA | IS43TR16256AL-125KBL |
|---|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix | ISSI |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Die Revision | E-die | E-die | E-die | D-die | N/A | N/A | N/A |
Bảo phân biệt quan trọng
- Wide temperature range (-40°C to +95°C) (vsK4B4G1646E-BYMA)
- E-die process technology (vsK4B4G1646D-BYMA0)
- JEDEC-standard compatibility (vsMT41K256M16RE-125:D)
Ghi chú thiết kế
For high-speed DDR3L routing, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/command signals. Keep trace lengths matched within +/- 0.5mm for each byte lane. Use ground planes beneath the memory area to minimize noise. Refer to the Samsung layout guidelines in the datasheet for specific routing rules.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close as possible to each power pin. Use a 10uF bulk capacitor near the memory power input. Ensure the 1.35V supply has low ripple (<50mV) to maintain signal integrity. Consider using a dedicated LDO or DC-DC converter for the memory rail.
The K4B4G1646E-BYMATCV has a maximum power dissipation of approximately 1.5W at full load. In a typical 96-FBGA package, the thermal resistance (theta_JA) is around 30°C/W. Ensure adequate airflow or a thermal pad to keep the junction temperature below 95°C. For high-temperature environments, consider derating the data rate.
Thông tin tuân thủ
RoHS compliance is indicated by the 'CV' suffix in the part number. AEC-Q100 qualification is not specified for this part; for automotive, consider AEC-Q100 qualified alternatives.
