H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix
부품 번호: H5AN4G8NBJR-UHCR ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $5.9 | $5.90 |
| 10 | $5.31 | $53.10 |
| 100 | $4.46 | $446.00 |
| 500 | $3.83 | $1,915.00 |
| 1,000 | $3.18 | $3,180.00 |
H5AN4G8NBJR-UHCR 개요
A DDR4 SDRAM (Double Data Rate Fourth-Generation Synchronous Dynamic Random Access Memory) is a type of volatile semiconductor memory that transfers data on both clock edges, doubling bandwidth relative to SDR memory at the same clock frequency. Within the memory hierarchy, it sits as main-memory DRAM below CPU caches and above storage, and belongs to the broader category of memory ICs and power-management-adjacent system components in embedded and computing platforms.
Key features include 4Gb density organized as 512M x 8, an 8n internal prefetch architecture, industrial-grade temperature support with case temperature maintained from -40C to +85C (extended operation up to 95C case per the manufacturer datasheet), and lead-free, halogen-free RoHS-compliant construction. The UH speed grade targets PC2400-class bandwidth for cost-optimized computing platforms.
Technically, the device uses SK hynix CMOS DRAM process technology with bank-group architecture that enables higher effective data rates per clock. Terminated IO (ODT) on-die termination and CA parity support preserve signal integrity at 2400 MT/s across the fly-by command/address topology used on DDR4 DIMMs and solder-down memory buses.
Typical applications include industrial PCs and embedded controllers, networking and communication equipment main memory, and set-top box or smart-TV system memory where large density and proven DDR4 interoperability are required.
Design consideration: DDR4 layout demands length-matched, fly-by-routed address/command lines and per-byte lane matching; verify controller ZQ calibration and VTT termination budgets before layout freeze.
This page synthesizes distributor pricing, drop-in alternatives across SK hynix speed grades, and practical DDR4 design notes not found in the manufacturer datasheet.
드롭인 대체품: H5AN4G8NBJR-UHCR — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: H5AN4G8NBJR-UHCR (동일 폼 팩터 및 풋프린트) — 차이점: Package, Data Rate, Interface, RoHS Status, Speed Grade.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
H5AN4G8NBJR-UHC
✅ 드롭인✓ 재고 있음
$3.18 / 개
데이터시트 보기 →H5AN4G8NBJR-UHI
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$2.25 / 개
데이터시트 보기 →H5AN4G8NBJR-VKC
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$2.4 / 개
데이터시트 보기 →H5AN4G8NBJR-VKI
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$1.98 / 개
데이터시트 보기 →H5AN4G8NBJR-RDC
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$2.95 / 개
데이터시트 보기 →H5AN4G8NBJR-PBC
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$2.2 / 개
데이터시트 보기 →H5AN4G8NBJR-UHCR 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM |
| Density | 4 Gbit |
| 메모리 구성 | 512M x 8 |
| Speed Grade | UH (DDR4-2400 class, PC2400) |
| 공급 전압 | 1.2 V (VDD) |
| 인터페이스 | DDR4 SSTL12 |
| Internal Prefetch | 8n |
| 패키지 | 78-ball FBGA (11 mm x 7.5 mm) |
| 실장 유형 | Surface Mount (BGA solder-down) |
| Operating Case Temperature | -40C to +85C (industrial range) |
| Extended Temperature Range | Up to +95C case temperature (per datasheet conditions) |
| Lead Free | Yes |
| 할로겐 프리 | Yes |
| RoHS 상태 | Compliant |
| Packaging Suffix | -R = Tape and Reel |
H5AN4G8NBJR-UHCR -40c to +85c (industrial range) 핀 구성 가이드
H5AN4G8NBJR-UHCR(-40c to +85c (industrial range) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: H5AN4G8NBJR-UHCR.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
H5AN4G8NBJR-UHCR 적합 용도: 6 애플리케이션s: Industrial PCs and Embedded Controllers, Networking and Communication Equipment, Set-Top Box and Smart TV System Memory, Test and Measurement Instrumentation, Gaming and Edge AI Accelerators, Automotive Infotainment and Cluster (Non-AEC Designs).
Industrial PCs and Embedded Controllers
The H5AN4G8NBJR-UHCR fits industrial computing because the series datasheet supports case temperatures from -40C to +85C in the industrial range, with extended operation to 95C case under defined conditions. In a fanless industrial PC, 4Gb of DDR4-2400-class bandwidth at 1.2V provides headroom for HMI rendering, protocol stacks, and local logging. Designers typically mount the 78-ball FBGA directly on the CPU-adjacent memory bus with fly-by routed command/address lines and per-byte length matching on DQ0-DQ7. On-die termination (ODT) reduces the external termination component count versus DDR3, shrinking PCB area. Trade-off: above 85C case, refresh derating applies, so thermal simulation before layout is advised.
추천
Networking and Communication Equipment
Switches, routers, and access equipment need buffer memory with high sustained bandwidth and proven DDR4 interoperability. The UHCR's 512M x 8 organization with 8n prefetch delivers DDR4-2400-class bandwidth suited for packet buffering and table lookups in mid-range designs. Its 1.2V rail reduces memory-subsystem power versus DDR3 solutions, important in always-on network hardware with thermal budgets. The solder-down 78-ball FBGA (11 x 7.5 mm) allows compact multi-device topologies on switch mainboards. Design consideration: use per-rank ZQ calibration and match trace lengths within controller spec; retrain memory at every firmware boot to absorb temperature drift across the -40C to +85C industrial case range.
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Set-Top Box and Smart TV System Memory
Consumer video platforms require large memory density for 4K decode buffers, and SK hynix documented this H5AN4GxNBJR family explicitly as Consumer DDR4. The UHCR supplies 4Gb at DDR4-2400 class from a single 1.2V rail, and its 8-bit organization lets designers pair two devices for a 16-bit SoC bus or scale to four for 32-bit systems. Lead-free, halogen-free RoHS construction satisfies consumer-region environmental regulations. The FBGA solder-down format withstands set-top enclosure thermal profiles up to the datasheet's 85C case ceiling (95C extended with derating). Trade-off: consumer bins assume the documented case-temperature discipline; verify enclosure airflow since ambient-to-case delta can exceed 15C in sealed enclosures.
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Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators use DDR4 as deep capture memory, where the UHCR's 4Gb density directly extends record length. The 512M x 8 bus allows byte-granular architecture with DM masking, and DDR4-2400-class transfer rates sustain real-time streaming into capture buffers. Industrial temperature support from -40C to +85C case suits bench and field instruments alike. Designers place the FBGA near the acquisition FPGA with the fly-by CA topology and use ODT tuning to maintain eye margins at speed. Consideration: capture-path write latency and refresh interruption must be accounted for in the FPGA memory controller; use the datasheet tRFC and refresh-interval tables when sizing real-time windows.
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Gaming and Edge AI Accelerators
Cost-sensitive gaming peripherals and edge-AI inference modules use solder-down DDR4 as frame buffers and model workspaces. The H5AN4G8NBJR-UHCR offers a validated 4Gb DDR4-2400 device whose 1.2V operation lowers total memory power versus DDR3L, extending battery life in portable edge devices. The 78-ball FBGA fits under thermal spreaders typical of SoM designs. Where inference workloads stress bandwidth, designers pair two x8 devices for a 16-bit 64-bit-wide-configurable bus and retrain ODT for the higher loading. Note the honest trade-off: 2400-class bandwidth is modest for large models; high-throughput AI designs should evaluate LPDDR4x or GDDR alternatives instead.
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Automotive Infotainment and Cluster (Non-AEC Designs)
For tier-2 automotive-adjacent platforms such as aftermarket head units and non-safety displays, the UHCR provides 4Gb of DDR4 working memory at -40C to +85C case coverage, matching the environmental envelope of most cabin electronics. However, this consumer/industrial family is not marketed as AEC-Q100 qualified; safety-relevant clusters should specify SK hynix or competitor automotive-grade DDR4 instead. Electrically, the 1.2V POD12 interface and ODT integrate directly with mainstream infotainment SoCs supporting DDR4-2400. Layout practice: keep the FBGA within 50 mm of the SoC, obey per-byte skew budgets, and validate SI at both -40C and +85C corners since DDR4 eye margins shift with temperature.
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추천 제품 요약
엔지니어링 참조 데이터: H5AN4G8NBJR-UHCR — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | H5AN4G8NBJR-UHC | H5AN4G8NBJR-VKC | H5AN4G8NBJR-RDC | H5AN4G8NBJR-PBC |
|---|---|---|---|---|---|
| Package | 78-ball FBGA (11 x 7.5 mm) | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Density / Organization | 4 Gbit / 512M x 8 | 4 Gbit / 512M x 8 | 4 Gbit / 512M x 8 | 4 Gbit / 512M x 8 | 4 Gbit / 512M x 8 |
| Speed Grade | UH (DDR4-2400 class) | UH (2400 class) | VK (2600 class) | RD (2133 class) | PB (1866 class) |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| RoHS / Lead-Free | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes |
주요 차별점
- Identical-die tape-and-reel variant (vs H5AN4G8NBJR-UHC)
- Faster-bin availability on same footprint (vs H5AN4G8NBJR-RDC)
- Cost-optimized speed selection (vs H5AN4G8NBJR-VKC)
- Industrial temperature envelope (vs H5AN4G8NBJR-UHI (extended bin aside))
설계 노트
Route DDR4 x8 buses with fly-by command/address topology and match DQ0-DQ7 within the controller's per-byte skew budget (typically +/-25 mil intra-byte; confirm with your SoC memory design guide). Keep the 78-ball FBGA within 50 mm of the controller, use controlled-impedance 40-ohm single-ended and 80-ohm differential traces, and reference DQ/CA routing to a solid VDD plane. Estimate: at DDR4-2400 the unit interval is 417 ps, so 10 ps of unmatched skew consumes 2.4% of the eye - tighten matching on the clock-to-strobe relationship first.
The device runs from 1.2V VDD/VDDQ plus 2.5V VPP; DDR4 requires tight tolerance on all three rails with per-device bulk and high-frequency decoupling. Place at least 4x 100nF 0402 ceramics within 3 mm of the ball field plus one 10uF bulk per device. Estimated: with operating current in the hundreds of milliamps per device (see the datasheet IDD tables for your speed bin), a shared 4-layer power plane with 1 oz copper typically keeps rail droop under 3%; simulate with your actual burst-current profile from the IDD7 row-activation spec.
Per the H5AN4GxNBJR datasheet, the case temperature must be maintained between -40C and +85C under all operating conditions, with extended operation to 95C case permitted under datasheet conditions. Estimated: without airflow, FBGA junction-to-case rise of roughly 5-10 C/W means a device dissipating ~0.5 W runs about 3-5 C above ambient-case delta, so a sealed enclosure at 60C ambient can approach the 85C limit at sustained DDR traffic. Add copper pour under the BGA and verify with a thermocouple at worst-case memory stress.
Do not assume all speed bins are interchangeable in timing: the VKC bin carries tighter AC parameters than UH, and RDC/PBC derate below 2400 MT/s. Always re-run memory controller training (write leveling, read training, ZQ calibration) after any substitution, even within the same family. Also, the -R suffix is packaging only - but mixing tray and reel stock in the same build is fine electrically. Finally, this consumer/industrial family is not AEC-Q100 qualified; do not deploy it in safety-relevant automotive sockets.
규정 준수 정보
JLCPCB and LCSC listings mark H5AN4G8NBJR-UHC (identical die to -UHCR) as ROHS; series datasheet metadata describes Lead-Free & Halogen-Free construction. This is a Consumer/Industrial DDR4 family per the manufacturer datasheet - not marketed as AEC-Q100 qualified.
