AS4C512M16D4A-62BCN vs H5AN8G8NDJR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci AS4C512M16D4A-62BCN disebabkan oleh Alliance Memory dan H5AN8G8NDJR disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Alliance Memory
AS4C512M16D4A-62BCN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BCN ✓ Aktif
Pengandingan Spesifikasi
| Parametr | AS4C512M16D4A-62BCN | H5AN8G8NDJR |
|---|---|---|
| Merek | Alliance Memory | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit | — |
| Organisasi | 512M x 16 | 1G x 8 |
| Tegangan Pemberi Arus | 1.2 V | — |
| Kadar Data | 1600 MHz (3200 Mbps) | 3200 MT/s |
| Latensi CAS | 18 ns | 22 (typical) |
| Kemasan | 96-FBGA (7.5x13 mm) | FBGA-78 (7.5x11 mm) |
| Suhu Operasi | 0°C to 95°C | 0°C to +95°C (Tc) |
| Jenis Pemasangan | Surface Mount | — |
| JEDEC Standard | Compliant | — |
| Antaramuka | POD (Pseudo Open Drain) | — |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes | — |
| Status RoHS | Compliant | — |
| Packaging | Tray | — |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V (1.14V to 1.26V) |
| VDDQ | — | 1.2 V |
| VPP | — | 2.5 V |
| tRCD | — | 22 ns |
| tRP | — | 22 ns |
| Burst Length | — | 8 and 4 (with burst chop) |
| Self-Refresh Current | — | 30 mA (typical) |
| Active Standby Current | — | 60 mA (typical) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |