AS4C512M16D4A-62BCN vs H5AN8G8NDJR 比較
詳細並排比較 AS4C512M16D4A-62BCN 由 Alliance Memory 與 H5AN8G8NDJR 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Alliance Memory
AS4C512M16D4A-62BCN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BCN ✓ 啟用中
規格比較
| 參數 | AS4C512M16D4A-62BCN | H5AN8G8NDJR |
|---|---|---|
| 品牌 | Alliance Memory | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit | — |
| 組織 | 512M x 16 | 1G x 8 |
| 供應電壓 | 1.2 V | — |
| 資料速率 | 1600 MHz (3200 Mbps) | 3200 MT/s |
| CAS 延遲 | 18 ns | 22 (typical) |
| 封裝 | 96-FBGA (7.5x13 mm) | FBGA-78 (7.5x11 mm) |
| 工作溫度 | 0°C to 95°C | 0°C to +95°C (Tc) |
| 安裝類型 | Surface Mount | — |
| JEDEC Standard | Compliant | — |
| 介面 | POD (Pseudo Open Drain) | — |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes | — |
| RoHS 狀態 | Compliant | — |
| Packaging | Tray | — |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V (1.14V to 1.26V) |
| VDDQ | — | 1.2 V |
| VPP | — | 2.5 V |
| tRCD | — | 22 ns |
| tRP | — | 22 ns |
| Burst Length | — | 8 and 4 (with burst chop) |
| Self-Refresh Current | — | 30 mA (typical) |
| Active Standby Current | — | 60 mA (typical) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |