AS4C512M16D4A-62BCN vs H5AN8G8NDJR Perbandingan
Perbandingan bersamaan detil AS4C512M16D4A-62BCN dari Alliance Memory dan H5AN8G8NDJR dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Alliance Memory
AS4C512M16D4A-62BCN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BCN ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | AS4C512M16D4A-62BCN | H5AN8G8NDJR |
|---|---|---|
| Merek | Alliance Memory | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gbit | — |
| Organisasi | 512M x 16 | 1G x 8 |
| Tegangan Pemuat | 1.2 V | — |
| Laju Data | 1600 MHz (3200 Mbps) | 3200 MT/s |
| Latensi CAS | 18 ns | 22 (typical) |
| Paket | 96-FBGA (7.5x13 mm) | FBGA-78 (7.5x11 mm) |
| Suhu Kerja | 0°C to 95°C | 0°C to +95°C (Tc) |
| Tipe Mounting | Surface Mount | — |
| JEDEC Standard | Compliant | — |
| Antarmuka | POD (Pseudo Open Drain) | — |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes | — |
| Status RoHS | Compliant | — |
| Packaging | Tray | — |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V (1.14V to 1.26V) |
| VDDQ | — | 1.2 V |
| VPP | — | 2.5 V |
| tRCD | — | 22 ns |
| tRP | — | 22 ns |
| Burst Length | — | 8 and 4 (with burst chop) |
| Self-Refresh Current | — | 30 mA (typical) |
| Active Standby Current | — | 60 mA (typical) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |