BSS127H6327XTSA2 vs BSS123IXTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS127H6327XTSA2 disebabkan oleh Infineon dan BSS123IXTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS127H6327XTSA2 BSS123IXTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel SIPMOS, enhancement mode —
Drain-Source Voltage (VDS) 600 V 100 V
Continuous Drain Current (ID) 21 mA (Ta) —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed ID limit] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 4.5 V (logic level, rated) [DATA_NEEDED: VGS(th) min/typ/max]
On-State Resistance (RDS(on)) max 500 ohm at ID = 21 mA —
Total Power Dissipation (Ptot) 500 mW (Ta) —
Suhu Hubungan Operasi -55 C to +150 C —
Kemasan SOT-23-3 (PG-SOT23) PG-SOT-23-3 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 —
dv/dt Rated Yes —
Automotive Qualification AEC-Q101 —
Status RoHS Compliant (lead-free) —
Boson Bebas Yes, per IEC 61249-2-21 —
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Jenis Transistor — N-Channel MOSFET
Technology — OptiMOS Small-Signal
Continuous Drain Current (ID) at TA=25C — 190 mA
Power Dissipation (PD) at TA=25C — 500 mW
RDS(on) (typical, VGS=10 V) — 2.4 ohm
RDS(on) (max per family datasheet) — 6 ohm
Gambaran Suhu Operasi — -55C to +150C (per family datasheet)
Qualification — Industrial
Configuration — Single N-Channel
Lead-Free / RoHS — Yes (per distributor listing)
Gate Drive Logic Level — Logic-level compatible

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