H5AN8G6NDJR-XNC vs AS4C512M16D4-75BIN Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NDJR-XNC disebabkan oleh SK hynix dan AS4C512M16D4-75BIN disebabkan oleh Alliance Memory. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Alliance Memory
AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4-75BIN ✓ AktifPengandingan Spesifikasi
| Parametr | H5AN8G6NDJR-XNC | AS4C512M16D4-75BIN |
|---|---|---|
| Merek | SK hynix | Alliance Memory |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $55.68 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb | 8 Gbit |
| Memory Organization | 512M x16 | 512M x 16 |
| Kadar Data | 3200 Mbps | 2666 Mbps |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | — |
| Kemasan | FBGA-96 (13x7.5 mm) | 96-FBGA (7.5x13) |
| Number of Terminals | 96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Input/Output Type | COMMON | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| Clock Frequency | — | 1.333 GHz |
| Access Time | — | 18 ns |
| Write Cycle Time | — | 15 ns |
| Tegangan Pemberi Arus | — | 1.2 V |
| Suhu Operasi | — | -40°C to +95°C |
| Jenis Pemasangan | — | Surface Mount |
| Antaramuka | — | POD |
| Bilangan Pin | — | 96 |
| Status RoHS | — | Compliant |
| Ciri-ciri | — | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration |