IAUCN10S7N021ATMA1 vs IPN95R3K7P7ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S7N021ATMA1 disebabkan oleh Infineon dan IPN95R3K7P7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IAUCN10S7N021ATMA1 | IPN95R3K7P7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 7 (trench MOSFET) | Super-junction (CoolMOS P7) |
| Drain-Source Voltage (VDS) | 100 V | 950 V |
| Continuous Drain Current (ID) at Tc | 175 A | 2.0 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| RDS(on) max @ VGS=10 V | 2.1 mΩ | — |
| Gate-Source Threshold (VGS(th)) typ | 3.2 V | — |
| Total Gate Charge (Qg) @ VGS=10 V | 105 nC | — |
| Input Capacitance (Ciss) | 2.98 nF | — |
| Output Capacitance (Coss) | 32 pF | — |
| Reverse Transfer Capacitance (Crss) | 7.153 nF | — |
| Power Dissipation (Pd) @ Tc | 217 W | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | -55 C to +150 C |
| Kemasan | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad | PG-SOT223 (3-pin + tab, surface mount) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS P7 |
| Jenis Transistor | — | N-Channel MOSFET |
| Power Dissipation (Pd) at Tc | — | 6 W |
| On-State Resistance (RDS(on)) max | — | 3700 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Lead-Free | — | Yes |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |