IAUCN10S7N021ATMA1 vs IPN95R3K7P7ATMA1 比較
詳細並排比較 IAUCN10S7N021ATMA1 由 Infineon 與 IPN95R3K7P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ 啟用中
規格比較
| 參數 | IAUCN10S7N021ATMA1 | IPN95R3K7P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 7 (trench MOSFET) | Super-junction (CoolMOS P7) |
| Drain-Source Voltage (VDS) | 100 V | 950 V |
| Continuous Drain Current (ID) at Tc | 175 A | 2.0 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| RDS(on) max @ VGS=10 V | 2.1 mΩ | — |
| Gate-Source Threshold (VGS(th)) typ | 3.2 V | — |
| Total Gate Charge (Qg) @ VGS=10 V | 105 nC | — |
| Input Capacitance (Ciss) | 2.98 nF | — |
| Output Capacitance (Coss) | 32 pF | — |
| Reverse Transfer Capacitance (Crss) | 7.153 nF | — |
| Power Dissipation (Pd) @ Tc | 217 W | — |
| 工作接面溫度 | -55 °C to +175 °C | -55 C to +150 C |
| 封裝 | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad | PG-SOT223 (3-pin + tab, surface mount) |
| 安裝類型 | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| RoHS 狀態 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS P7 |
| 電晶體類型 | — | N-Channel MOSFET |
| Power Dissipation (Pd) at Tc | — | 6 W |
| On-State Resistance (RDS(on)) max | — | 3700 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Lead-Free | — | Yes |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |