IAUCN10S7N021ATMA1 vs IPN95R3K7P7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN10S7N021ATMA1 sa pamamagitan ng Infineon at IPN95R3K7P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IAUCN10S7N021ATMA1 IPN95R3K7P7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology OptiMOS™ 7 (trench MOSFET) Super-junction (CoolMOS P7)
Drain-Source Voltage (VDS) 100 V 950 V
Continuous Drain Current (ID) at Tc 175 A 2.0 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] —
RDS(on) max @ VGS=10 V 2.1 mΩ —
Gate-Source Threshold (VGS(th)) typ 3.2 V —
Total Gate Charge (Qg) @ VGS=10 V 105 nC —
Input Capacitance (Ciss) 2.98 nF —
Output Capacitance (Coss) 32 pF —
Reverse Transfer Capacitance (Crss) 7.153 nF —
Power Dissipation (Pd) @ Tc 217 W —
Temperature ng Junction na Operasyon -55 °C to +175 °C -55 C to +150 C
Packhaging PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad PG-SOT223 (3-pin + tab, surface mount)
Uri ng Pagpapasok Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
Tindminan RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — CoolMOS P7
Uri ng Transistor — N-Channel MOSFET
Power Dissipation (Pd) at Tc — 6 W
On-State Resistance (RDS(on)) max — 3700 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typ]
Lead-Free — Yes
Level ng MSL — [DATA_NEEDED: MSL rating]

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