IRF7351TRPBF vs FDS6575 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7351TRPBF disebabkan oleh Infineon dan FDS6575 disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF7351TRPBF | FDS6575 |
|---|---|---|
| Merek | Infineon | onsemi |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7351TRPBF | — |
| Configuration | Dual N-Channel MOSFET (Half-Bridge) | Single MOSFET |
| Drain-Source Voltage (VDS) | 60 V | -20 V |
| Continuous Drain Current (ID) | 8 A | -10 A |
| On-Resistance RDS(on) max | 17.8 mOhm | — |
| On-Resistance RDS(on) typ (per digchips) | 0.0137 ohm (13.7 mOhm) | — |
| Total Gate Charge (Qg) | 24 nC | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) | 2 W | — |
| Technology | IR MOSFET (HEXFET trench) | PowerTrench (rugged gate) |
| Kemasan | 8-SO (SO-8 / SOIC-8) Surface Mount | SOIC-8 (SO-8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55C to +150C (junction) | — |
| Typical Application | Synchronous Rectifier for Isolated DC-DC Converters | — |
| Status RoHS | Compliant (PBF suffix = lead-free) | Compliant |
| Lead-Free | Yes | — |
| Aras MSL | [DATA_NEEDED: MSL Level] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | — |
| Polarity | — | P-Channel |
| On-Resistance (RDS(on)) | — | 13 mOhm max at VGS = -4.5 V |
| Gate Drive Voltage Range | — | 2.5 V to 8 V |
| Tegangan Had Kepasaran | — | [DATA_NEEDED: gate threshold voltage range] |
| Power Dissipation | — | [DATA_NEEDED: power dissipation at TA] |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Gate Source Voltage (VGS) Range | — | [DATA_NEEDED: VGS max rating] |