IRF7351TRPBF vs FDS6575 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7351TRPBF sa pamamagitan ng Infineon at FDS6575 sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7351TRPBF FDS6575
Brand Infineon onsemi
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF7351TRPBF —
Configuration Dual N-Channel MOSFET (Half-Bridge) Single MOSFET
Drain-Source Voltage (VDS) 60 V -20 V
Continuous Drain Current (ID) 8 A -10 A
On-Resistance RDS(on) max 17.8 mOhm —
On-Resistance RDS(on) typ (per digchips) 0.0137 ohm (13.7 mOhm) —
Total Gate Charge (Qg) 24 nC [DATA_NEEDED: total gate charge]
Power Dissipation (PD) 2 W —
Technology IR MOSFET (HEXFET trench) PowerTrench (rugged gate)
Packhaging 8-SO (SO-8 / SOIC-8) Surface Mount SOIC-8 (SO-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55C to +150C (junction) —
Typical Application Synchronous Rectifier for Isolated DC-DC Converters —
Tindminan RoHS Compliant (PBF suffix = lead-free) Compliant
Lead-Free Yes —
Level ng MSL [DATA_NEEDED: MSL Level] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] —
Polarity — P-Channel
On-Resistance (RDS(on)) — 13 mOhm max at VGS = -4.5 V
Gate Drive Voltage Range — 2.5 V to 8 V
Threshold na Voltage ng Gate — [DATA_NEEDED: gate threshold voltage range]
Power Dissipation — [DATA_NEEDED: power dissipation at TA]
Hanay ng Temperature na Operasyon — [DATA_NEEDED: operating temperature range]
Gate Source Voltage (VGS) Range — [DATA_NEEDED: VGS max rating]

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