IRFP260MPBF vs STW45NM50 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFP260MPBF disebabkan oleh Infineon dan STW45NM50 disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
STMicroelectronics
STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics
STW45NM50 ✓ AktifPengandingan Spesifikasi
| Parametr | IRFP260MPBF | STW45NM50 |
|---|---|---|
| Merek | Infineon | STMicroelectronics |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide Semiconductor) | — |
| Drain-Source Voltage (VDS) | 200 V | 500 V |
| Continuous Drain Current (ID) at Tc=25C | 50 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 180 A |
| Power Dissipation (PD) at Tc=25C | 300 W | — |
| On-Resistance RDS(on) max | 40 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | — |
| Input Capacitance Ciss | 1560 pF | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg] | — |
| Gambaran Suhu Operasi | -55C to +175C | -55°C to +150°C |
| Kemasan / Case | TO-247AC (3-lead through-hole) | — |
| Jenis Pemasangan | Through Hole | Through Hole |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | — |
| Aras MSL | Not Applicable (through-hole) | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at 25°C | — | 45 A |
| Continuous Drain Current (ID) at 100°C | — | 30 A |
| Gate-Source Voltage (VGS) | — | ±30 V |
| On-Resistance (RDS(on)) | — | 0.09 ohm |
| Gate Charge (Qg) | — | 120 nC |
| Avalanche Energy (EAS) | — | 1.2 J |
| Power Dissipation (PD) | — | 450 W |
| Kemasan | — | TO-247 |
| Boson Bebas | — | Yes |