IRFP260MPBF vs STW45NM50 比較
詳細並排比較 IRFP260MPBF 由 Infineon 與 STW45NM50 由 STMicroelectronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
STMicroelectronics
STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics
STW45NM50 ✓ 啟用中規格比較
| 參數 | IRFP260MPBF | STW45NM50 |
|---|---|---|
| 品牌 | Infineon | STMicroelectronics |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $9.55 |
| Manufacturer | Infineon Technologies | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide Semiconductor) | — |
| Drain-Source Voltage (VDS) | 200 V | 500 V |
| Continuous Drain Current (ID) at Tc=25C | 50 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 180 A |
| Power Dissipation (PD) at Tc=25C | 300 W | — |
| On-Resistance RDS(on) max | 40 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | — |
| Input Capacitance Ciss | 1560 pF | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg] | — |
| 工作溫度範圍 | -55C to +175C | -55°C to +150°C |
| 封裝 / 外殼 | TO-247AC (3-lead through-hole) | — |
| 安裝類型 | Through Hole | Through Hole |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | — |
| MSL 等級 | Not Applicable (through-hole) | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at 25°C | — | 45 A |
| Continuous Drain Current (ID) at 100°C | — | 30 A |
| Gate-Source Voltage (VGS) | — | ±30 V |
| On-Resistance (RDS(on)) | — | 0.09 ohm |
| Gate Charge (Qg) | — | 120 nC |
| Avalanche Energy (EAS) | — | 1.2 J |
| Power Dissipation (PD) | — | 450 W |
| 封裝 | — | TO-247 |
| 無鹵素 | — | Yes |