IRFP260MPBF vs STW45NM50 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFP260MPBF sa pamamagitan ng Infineon at STW45NM50 sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

STMicroelectronics
STW45NM50 STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics

STW45NM50 - 45A, 500V N-Channel Power MOSFET | STMicroelectronics

STW45NM50 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFP260MPBF STW45NM50
Brand Infineon STMicroelectronics
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide Semiconductor) —
Drain-Source Voltage (VDS) 200 V 500 V
Continuous Drain Current (ID) at Tc=25C 50 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] 180 A
Power Dissipation (PD) at Tc=25C 300 W —
On-Resistance RDS(on) max 40 mOhm —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th)] —
Input Capacitance Ciss 1560 pF —
Total Gate Charge Qg [DATA_NEEDED: Qg] —
Hanay ng Temperature na Operasyon -55C to +175C -55°C to +150°C
Packhaging / Kaso TO-247AC (3-lead through-hole) —
Uri ng Pagpapasok Through Hole Through Hole
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Avalanche Rated Yes —
Level ng MSL Not Applicable (through-hole) —
Polarity — N-Channel
Continuous Drain Current (ID) at 25°C — 45 A
Continuous Drain Current (ID) at 100°C — 30 A
Gate-Source Voltage (VGS) — ±30 V
On-Resistance (RDS(on)) — 0.09 ohm
Gate Charge (Qg) — 120 nC
Avalanche Energy (EAS) — 1.2 J
Power Dissipation (PD) — 450 W
Packhaging — TO-247
Wala sa Halogen — Yes

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