IRFR1205TRPBF vs IRFR120NTRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR1205TRPBF disebabkan oleh Infineon dan IRFR120NTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR1205TRPBF | IRFR120NTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (IR MOSFET, 5th generation) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 55 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 44 A | 9.4 A |
| Pulsed Drain Current (IDM) | 160 A | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | +/- 20 V | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | 2 V min, 4 V max | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) at VGS=10V | 27 mOhm max | — |
| Total Gate Charge (Qg) | 43.3 nC | 16.7 nC |
| Power Dissition (PD) at TC=25C | 107 W | — |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Kemasan | TO-252AA (DPAK) | PG-TO252-3 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant (PBF suffix = lead-free) | Compliant |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen status] | — |
| On-Resistance RDS(on) max at VGS=10V | — | 210 mΩ |
| Power Dissipation (PD) at TC=25C | — | 48 W |
| Gambaran Suhu Hubungan Operasi | — | -55C to +175C |
| Avalanche Energy Rated | — | Yes (fully avalanche rated) |
| Lead-Free Finish | — | Yes (Pb-free) |