IRFR1205TRPBF vs IRFR120NTRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR1205TRPBF sa pamamagitan ng Infineon at IRFR120NTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR1205TRPBF | IRFR120NTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (IR MOSFET, 5th generation) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 55 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 44 A | 9.4 A |
| Pulsed Drain Current (IDM) | 160 A | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | +/- 20 V | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | 2 V min, 4 V max | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) at VGS=10V | 27 mOhm max | — |
| Total Gate Charge (Qg) | 43.3 nC | 16.7 nC |
| Power Dissition (PD) at TC=25C | 107 W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | — |
| Packhaging | TO-252AA (DPAK) | PG-TO252-3 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant (PBF suffix = lead-free) | Compliant |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen status] | — |
| On-Resistance RDS(on) max at VGS=10V | — | 210 mΩ |
| Power Dissipation (PD) at TC=25C | — | 48 W |
| Hanay ng Temperature ng Junction na Operasyon | — | -55C to +175C |
| Avalanche Energy Rated | — | Yes (fully avalanche rated) |
| Lead-Free Finish | — | Yes (Pb-free) |