IRFR1205TRPBF vs IRFR120NTRLPBF 比較

詳細並排比較 IRFR1205TRPBF 由 Infineon 與 IRFR120NTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRFR1205TRPBF IRFR120NTRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel
Technology HEXFET (IR MOSFET, 5th generation) IR MOSFET (HEXFET)
Drain-Source Voltage (VDS) 55 V 100 V
Continuous Drain Current (ID) at TC=25C 44 A 9.4 A
Pulsed Drain Current (IDM) 160 A [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max +/- 20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) at VGS=10V 27 mOhm max —
Total Gate Charge (Qg) 43.3 nC 16.7 nC
Power Dissition (PD) at TC=25C 107 W —
工作接面溫度 -55C to +175C —
封裝 TO-252AA (DPAK) PG-TO252-3 (DPAK)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant (PBF suffix = lead-free) Compliant
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] —
On-Resistance RDS(on) max at VGS=10V — 210 mΩ
Power Dissipation (PD) at TC=25C — 48 W
工作接面溫度範圍 — -55C to +175C
Avalanche Energy Rated — Yes (fully avalanche rated)
Lead-Free Finish — Yes (Pb-free)

資料表與資源

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