K4A4G165WD-BCTD vs H5AN4G6NBJR-UHC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G165WD-BCTD disebabkan oleh Samsung Electronics dan H5AN4G6NBJR-UHC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A4G165WD-BCTD | H5AN4G6NBJR-UHC |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Kadar Data | 2666 Mbps/pin (-BCTD speed grade) | — |
| Supply Voltage (VDD) | 1.2 V | 1.14 V to 1.26 V |
| Core Supply (VPP) | 2.5 V | — |
| Antaramuka | SSTL-12 | — |
| Data Mask | Yes (DM per byte lane) | — |
| Bank Architecture | 16 banks / 4 bank groups | — |
| Kemasan | 96-ball FBGA | FBGA-96 (PBGA-96) |
| Jenis Pemasangan | Surface Mount (BGA) | Surface Mount |
| Suhu Operasi | 0C to +85C (commercial) | -40C to +95C |
| On-Die Termination | Dynamic ODT | Dynamic ODT |
| ZQ Calibration | Yes (external RZQ resistor) | Yes |
| CRC / CA Parity | CRC read/write support | — |
| Reset | Asynchronous reset (RESET_n) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Saiz Ingatan | — | 4 Gbit |
| Clock Frequency | — | 1.6 GHz |
| Technology | — | CMOS |
| Self Refresh | — | Auto self-refresh |
| Data Mask Function | — | Yes (DM) |
| Asynchronous Reset | — | Yes (RESET_n) |
| Write Leveling | — | Yes |
| CRC Function | — | Yes (command/address CRC) |