K4A8G045WB vs K4A8G165WB-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G045WB disebabkan oleh Samsung Electronics dan K4A8G165WB-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G045WB | K4A8G165WB-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM (B-die) | DDR4 SDRAM (DRAM, volatile) |
| Density | 8 Gb | — |
| Organisasi | 2G x 4 | — |
| Kadar Data | 2133 Mbps | 2400 Mbps/pin (DDR4-2400) |
| Tegangan Pemberi Arus | 1.2 V | — |
| Max Supply Current | 211.7 mA | — |
| Suhu Operasi | 0 C to +85 C | -40C to +95C |
| Kemasan | 78-ball FBGA | 96-ball FBGA (PBGA96) |
| Refresh Cycles | 8192 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Number of Terminals | 78 | — |
| Clocking | Differential clock (CK / CK#) | — |
| On-Die Termination | Yes (ODT pin) | — |
| Asynchronous Reset | Yes | Yes |
| Posted CAS | Yes | — |
| Programmable CWL | Yes | — |
| Internal (Self) Calibration | Yes | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | — |
| Saiz Ingatan | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Antaramuka | — | Parallel (DDR4 SDRAM bus) |
| Supply Voltage (VDD) | — | 1.2 V |
| Technology | — | CMOS, B-die 8Gb die |
| Auto Precharge | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Clock Frequency | — | 1200 MHz (DDR4-2400) |