K4A8G085WB-BICH vs K4A8G085WB-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WB-BICH disebabkan oleh Samsung Electronics dan K4A8G085WB-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung
K4A8G085WB-BCTD ✓ AktifPengandingan Spesifikasi
| Parametr | K4A8G085WB-BICH | K4A8G085WB-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $8.53 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Tegangan Pemberi Arus | 1.2V | 1.2 V |
| Kadar Data | 2400 Mbps (DDR4-2400) | 2666 Mbps |
| Kemasan | 78-ball FBGA | FBGA-78 (78-ball TFBGA) |
| Suhu Operasi | 0°C to 85°C | [DATA_NEEDED: operating temperature range] |
| Max Supply Current | 170mA | — |
| Burst Length | BL8, BL16 | BL8 |
| Latensi CAS | Programmable | — |
| On-Die ECC | Yes | — |
| Data Bus Inversion | Yes | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Die Revision | B-die | B-die |
| Jenis Pemasangan | — | Surface Mount |
| Bank Structure | — | 16 banks, 4 bank groups |
| Termination | — | On-Die Termination (ODT), dynamic ODT |
| Ciri-ciri | — | ZQ calibration, CRC, CA parity, asynchronous reset |
| Speed Bin | — | -BCTD (CL-tRCD-tRP bin) |
| Terminations | — | 78 |
| JEDEC-30 Package Code | — | R-PBGA-B78 |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |