K4A8G085WB-BICH vs K4A8G085WB-BCTD Comparison
Detailed side-by-side comparison of K4A8G085WB-BICH by Samsung Electronics and K4A8G085WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung
K4A8G085WB-BCTD ✓ ActiveSpecification Comparison
| Parameter | K4A8G085WB-BICH | K4A8G085WB-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $8.53 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2V | 1.2 V |
| Data Rate | 2400 Mbps (DDR4-2400) | 2666 Mbps |
| Package | 78-ball FBGA | FBGA-78 (78-ball TFBGA) |
| Operating Temperature | 0°C to 85°C | [DATA_NEEDED: operating temperature range] |
| Max Supply Current | 170mA | — |
| Burst Length | BL8, BL16 | BL8 |
| CAS Latency | Programmable | — |
| On-Die ECC | Yes | — |
| Data Bus Inversion | Yes | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Die Revision | B-die | B-die |
| Mounting Type | — | Surface Mount |
| Bank Structure | — | 16 banks, 4 bank groups |
| Termination | — | On-Die Termination (ODT), dynamic ODT |
| Features | — | ZQ calibration, CRC, CA parity, asynchronous reset |
| Speed Bin | — | -BCTD (CL-tRCD-tRP bin) |
| Terminations | — | 78 |
| JEDEC-30 Package Code | — | R-PBGA-B78 |
| RoHS Status | — | [DATA_NEEDED: RoHS status] |