K4A8G085WB-BICH vs K4A8G085WB-BCTD Comparison
Detailed side-by-side comparison of K4A8G085WB-BICH by Samsung Electronics and K4A8G085WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BICH
K4A8G085WB-BICH - 8Gb DDR4 SDRAM 1Gx8 | Samsung
K4A8G085WB-BICH β ActiveSamsung Electronics
K4A8G085WB-BCTD
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 | Samsung | FBGA-78
K4A8G085WB-BCTD β ActiveSpecification Comparison
| Parameter | K4A8G085WB-BICH | K4A8G085WB-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.96 | $7.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | β |
| Organization | 1G x 8 | β |
| Supply Voltage | 1.2V | 1.2 V |
| Data Rate | 2400 Mbps (DDR4-2400) | 3200 Mbps (PC4-25600) |
| Package | 78-ball FBGA | FBGA-78 (TFBGA) |
| Operating Temperature | 0Β°C to 85Β°C | 0Β°C to +95Β°C (TC) |
| Max Supply Current | 170mA | β |
| Burst Length | BL8, BL16 | 8 (BL8) |
| CAS Latency | Programmable | β |
| On-Die ECC | Yes | β |
| Data Bus Inversion | Yes | β |
| RoHS | Compliant | β |
| Lead-Free | Yes | β |
| Die Revision | B-die | β |
| Memory Size | β | 8 Gb (1G x 8) |
| Speed Bin | β | CL22-22-22 |
| On-Die Termination | β | Yes (ODT) |
| ZQ Calibration | β | Yes |
| Auto Precharge | β | Yes |
| Asynchronous Reset | β | Yes |
| CRC Function | β | Yes |
| Dynamic On-Chip Termination | β | Yes |
| Data Mask Function | β | Yes |
| JESD-30 Code | β | R-PBGA-B78 |
| Number of Terminals | β | 78 |
| RoHS Status | β | Compliant |