K4A8G165WB-BCTD vs H5AN8G6NDJR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BCTD disebabkan oleh Samsung Electronics dan H5AN8G6NDJR disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4A8G165WB-BCTD | H5AN8G6NDJR |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 512M x 16 | 512M x 16 |
| Kadar Data | 2666 Mbps | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD) | 1.2 V | — |
| Suhu Operasi | 0C to +85C | — |
| Kemasan | 96FBGA | 96-ball FBGA (13mm x 7.5mm) |
| Die Generation | B-die | — |
| Jenis Pemasangan | Surface Mount (BGA) | — |
| Antaramuka | DDR4 (parallel, double data rate) | — |
| Data Mask | Supported (DM per x16 lane) | — |
| ZQ Calibration | Supported | — |
| Dynamic On-Die Termination | Supported | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | 22 cycles (at 3200 Mbps) |
| Refresh Rate | [DATA_NEEDED: Refresh Rate] | — |
| Status RoHS | Compliant (per JLCPCB listing: ROHS) | — |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL Level] | — |
| Tegangan Pemberi Arus | — | 1.2 V |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |
| Ciri-ciri | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |