K4A8G165WB-BCTD vs H5AN8G6NDJR Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WB-BCTD sa pamamagitan ng Samsung Electronics at H5AN8G6NDJR sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | K4A8G165WB-BCTD | H5AN8G6NDJR |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasyon | 512M x 16 | 512M x 16 |
| Rate ng Data | 2666 Mbps | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD) | 1.2 V | — |
| Temperature na Operasyon | 0C to +85C | — |
| Packhaging | 96FBGA | 96-ball FBGA (13mm x 7.5mm) |
| Die Generation | B-die | — |
| Uri ng Pagpapasok | Surface Mount (BGA) | — |
| Interface | DDR4 (parallel, double data rate) | — |
| Data Mask | Supported (DM per x16 lane) | — |
| ZQ Calibration | Supported | — |
| Dynamic On-Die Termination | Supported | — |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | 22 cycles (at 3200 Mbps) |
| Refresh Rate | [DATA_NEEDED: Refresh Rate] | — |
| Tindminan RoHS | Compliant (per JLCPCB listing: ROHS) | — |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL Level] | — |
| Volte ng Pagbibigay | — | 1.2 V |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |
| Mga Karakteristika | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |