K4A8G165WB-BCTD vs H5AN8G6NDJR Perbandingan
Perbandingan bersamaan detil K4A8G165WB-BCTD dari Samsung Electronics dan H5AN8G6NDJR dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4A8G165WB-BCTD | H5AN8G6NDJR |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 512M x 16 | 512M x 16 |
| Laju Data | 2666 Mbps | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD) | 1.2 V | — |
| Suhu Kerja | 0C to +85C | — |
| Paket | 96FBGA | 96-ball FBGA (13mm x 7.5mm) |
| Die Generation | B-die | — |
| Tipe Mounting | Surface Mount (BGA) | — |
| Antarmuka | DDR4 (parallel, double data rate) | — |
| Data Mask | Supported (DM per x16 lane) | — |
| ZQ Calibration | Supported | — |
| Dynamic On-Die Termination | Supported | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | 22 cycles (at 3200 Mbps) |
| Refresh Rate | [DATA_NEEDED: Refresh Rate] | — |
| Status RoHS | Compliant (per JLCPCB listing: ROHS) | — |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL Level] | — |
| Tegangan Pemuat | — | 1.2 V |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |
| Fitur | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |