K4A8G165WB-BCWE vs K4A8G165WC-BCPB Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BCWE disebabkan oleh Samsung Electronics dan K4A8G165WC-BCPB disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4A8G165WB-BCWE | K4A8G165WC-BCPB |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $6.25 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Saiz Ingatan | 8 Gb | 8 Gb |
| Memory Organization | 512M x 16 | 512M x 16 |
| Kadar Data | 3200 Mbps/pin | DDR4-2133 (2133 Mbps/pin) |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Access Time | 19 ns | — |
| Antaramuka | Parallel | DDR4 (16-bit data bus) |
| Kemasan | 96FBGA | 96-ball FBGA (TFBGA) |
| Suhu Operasi | 0C to +85C | 0C to +95C |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Memory Format | DRAM (volatile) | — |
| Technology | DDR4 SDRAM B-die | — |
| Prefetch | 8n | — |
| Refresh | Self-refresh supported | — |
| Termination | On-die termination (ODT) | On-die termination (ODT), dynamic |
| Status RoHS | [DATA_NEEDED: RoHS compliance statement] | Compliant |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL Level] |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Die Generation | — | C-die (1Y nm class) |
| Ciri-ciri | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Standard | — | JEDEC DDR4 SDRAM |