K4A8G165WB-BCWE vs K4A8G165WC-BCPB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WB-BCWE sa pamamagitan ng Samsung Electronics at K4A8G165WC-BCPB sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ NakahandaSamsung Electronics
K4A8G165WC-BCPB - 8Gb DDR4-2133 SDRAM 96-FBGA | Samsung
K4A8G165WC-BCPB ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G165WB-BCWE | K4A8G165WC-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $6.25 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Laki ng Memory | 8 Gb | 8 Gb |
| Memory Organization | 512M x 16 | 512M x 16 |
| Rate ng Data | 3200 Mbps/pin | DDR4-2133 (2133 Mbps/pin) |
| Volte ng Pagbibigay | 1.2 V | 1.2 V |
| Access Time | 19 ns | — |
| Interface | Parallel | DDR4 (16-bit data bus) |
| Packhaging | 96FBGA | 96-ball FBGA (TFBGA) |
| Temperature na Operasyon | 0C to +85C | 0C to +95C |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Memory Format | DRAM (volatile) | — |
| Technology | DDR4 SDRAM B-die | — |
| Prefetch | 8n | — |
| Refresh | Self-refresh supported | — |
| Termination | On-die termination (ODT) | On-die termination (ODT), dynamic |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance statement] | Compliant |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL Level] |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Die Generation | — | C-die (1Y nm class) |
| Mga Karakteristika | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Standard | — | JEDEC DDR4 SDRAM |