K4A8G165WC-BCRC vs H5AN8G8NCJR-PBC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WC-BCRC disebabkan oleh Samsung Electro-Mechanics dan H5AN8G8NCJR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4A8G165WC-BCRC | H5AN8G8NCJR-PBC |
|---|---|---|
| Merek | Samsung Electro-Mechanics | SK hynix |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $19.69 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit | 8 Gb (1 GB) |
| Organisasi | 512M x 16 | 1G x 8 (x8) |
| Kadar Data | 2400 Mbps | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] |
| Clock Frequency | 1333 MHz | — |
| Tegangan Pemberi Arus | 1.2 V (1.14 V to 1.26 V) | — |
| Antaramuka | Parallel, 16-bit DDR | — |
| Standby Current (Idle) | 2 mA | — |
| Operating Current | 64 mA | — |
| Suhu Operasi | 0 C to +95 C | [DATA_NEEDED: operating temperature range] |
| Kemasan | 96-FBGA (TFBGA) | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Ciri-ciri | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | ODT, DM, DQS strobes, programmable CAS latency, self-refresh |
| Die Generation | C-die | — |
| Memory Format | DRAM | — |
| Status RoHS | Compliant | Lead-Free & Halogen-Free |
| Supply Voltage (VDD) | — | 1.2 V |
| Interface Voltage (VDDQ) | — | 1.2 V (SSTL12) |
| Architecture | — | CMOS, fully synchronous, dual-edge clocked |
| Bank Structure | — | 8 internal banks, bank-group architecture |
| Burst Length | — | BL8 |
| Die Revision Family | — | CJR (H5AN8G8NCJR-xxC) |
| Refresh | — | Auto-refresh and self-refresh |
| Typical Applications | — | PC/server main memory, embedded solder-down memory |