K4A8G165WC-BCTD vs K4A8G165WC-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WC-BCTD disebabkan oleh Samsung Electronics dan K4A8G165WC-BCRC disebabkan oleh Samsung Electro-Mechanics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ AktifPengandingan Spesifikasi
| Parametr | K4A8G165WC-BCTD | K4A8G165WC-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electro-Mechanics |
| Kategori | Memory ICs | EEPROM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 512M x16 | 512M x 16 |
| Kadar Data | 2666 Mbps (DDR4-2666) | 2400 Mbps |
| Clock Frequency | 1.333 GHz | 1333 MHz |
| Supply Voltage (VDD) | 1.2 V | — |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Suhu Operasi | 0C to +95C | 0 C to +95 C |
| Kemasan | 96FBGA | 96-FBGA (TFBGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Die Generation | C-die (1Y nm-class process) | C-die |
| CRC Function | Yes (write CRC) | — |
| ZQ Calibration | Yes | — |
| On-Die Termination | Dynamic ODT | — |
| Data Mask | Yes (x16 DM) | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Status RoHS | Compliant | Compliant |
| Saiz Ingatan | — | 8 Gbit |
| Tegangan Pemberi Arus | — | 1.2 V (1.14 V to 1.26 V) |
| Antaramuka | — | Parallel, 16-bit DDR |
| Standby Current (Idle) | — | 2 mA |
| Operating Current | — | 64 mA |
| Ciri-ciri | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Memory Format | — | DRAM |