K4A8G165WC-BCTD vs K4A8G165WC-BCRC Comparison
Detailed side-by-side comparison of K4A8G165WC-BCTD by Samsung Electronics and K4A8G165WC-BCRC by Samsung Electro-Mechanics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps x16 | Samsung
K4A8G165WC-BCTD ✓ ActiveSamsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WC-BCTD | K4A8G165WC-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electro-Mechanics |
| Category | Memory ICs | EEPROM |
| Lifecycle Status | Active | Active |
| Stock Status | — | In Stock |
| Unit Price (USD) | — | $19.69 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 512M x16 | 512M x 16 |
| Data Rate | 2666 Mbps (DDR4-2666) | 2400 Mbps |
| Clock Frequency | 1.333 GHz | 1333 MHz |
| Supply Voltage (VDD) | 1.2 V | — |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Operating Temperature | 0C to +95C | 0 C to +95 C |
| Package | 96FBGA | 96-FBGA (TFBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Die Generation | C-die (1Y nm-class process) | C-die |
| CRC Function | Yes (write CRC) | — |
| ZQ Calibration | Yes | — |
| On-Die Termination | Dynamic ODT | — |
| Data Mask | Yes (x16 DM) | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| RoHS Status | Compliant | Compliant |
| Memory Size | — | 8 Gbit |
| Supply Voltage | — | 1.2 V (1.14 V to 1.26 V) |
| Interface | — | Parallel, 16-bit DDR |
| Standby Current (Idle) | — | 2 mA |
| Operating Current | — | 64 mA |
| Features | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Memory Format | — | DRAM |