K4A8G165WC-BCTD vs K4A8G165WC-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WC-BCTD sa pamamagitan ng Samsung Electronics at K4A8G165WC-BCRC sa pamamagitan ng Samsung Electro-Mechanics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps x16 | Samsung
K4A8G165WC-BCTD ✓ NakahandaSamsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G165WC-BCTD | K4A8G165WC-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electro-Mechanics |
| Kategorya | Memory ICs | EEPROM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $19.69 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasyon | 512M x16 | 512M x 16 |
| Rate ng Data | 2666 Mbps (DDR4-2666) | 2400 Mbps |
| Clock Frequency | 1.333 GHz | 1333 MHz |
| Supply Voltage (VDD) | 1.2 V | — |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Temperature na Operasyon | 0C to +95C | 0 C to +95 C |
| Packhaging | 96FBGA | 96-FBGA (TFBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Die Generation | C-die (1Y nm-class process) | C-die |
| CRC Function | Yes (write CRC) | — |
| ZQ Calibration | Yes | — |
| On-Die Termination | Dynamic ODT | — |
| Data Mask | Yes (x16 DM) | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Tindminan RoHS | Compliant | Compliant |
| Laki ng Memory | — | 8 Gbit |
| Volte ng Pagbibigay | — | 1.2 V (1.14 V to 1.26 V) |
| Interface | — | Parallel, 16-bit DDR |
| Standby Current (Idle) | — | 2 mA |
| Operating Current | — | 64 mA |
| Mga Karakteristika | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Memory Format | — | DRAM |