K4A8G165WG-BCWE vs MT40A512M16AD-062E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WG-BCWE disebabkan oleh Samsung Electronics dan MT40A512M16AD-062E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G165WG-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WG-BCWE ✓ AktifMicron Technology
MT40A512M16AD-062E - 8Gbit DDR4 SDRAM x16 3200MT/s | Micron
MT40A512M16AD-062E ✓ AktifPengandingan Spesifikasi
| Parametr | K4A8G165WG-BCWE | MT40A512M16AD-062E |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $35.98 | — |
| Jenis Ingatan | DDR4 SDRAM (Volatile DRAM) | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit | 8 Gbit |
| Memory Organization | 512M x 16 | — |
| Antaramuka | Parallel | Parallel (POD) |
| Max Data Rate | 3200 Mbps/pin | — |
| Clock Cycle Time | 19 ns | — |
| Tegangan Pemberi Arus | 1.2 V | [DATA_NEEDED: core supply voltage (VDD)] |
| Kemasan | FBGA-96 (BGA-96), surface mount | 96-FBGA (7.5 mm x 13.5 mm) |
| Suhu Operasi | 0C to +85C (commercial) | [DATA_NEEDED: operating temperature range] |
| Refresh | Auto/self refresh per DDR4 standard | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Manufacturer | Samsung Semiconductor, Inc. | — |
| Product Status | Active | — |
| Typical Standby Current | 20 mA (per LCSC listing) | — |
| Die Generation | Samsung B-die, 8Gb DDR4 x16 | — |
| Organisasi | — | 512M x 16 |
| Clock Frequency | — | 1.6 GHz |
| Access Time (Row Cycle) | — | 19 ns |
| Automotive Qualification | — | AUT:E (automotive variant) |
| Speed Grade | — | -062E |
| Prefetch Architecture | — | 8n with bank groups |
| HS Code (USHTS) | — | 8542320071 |
| Standard Pack Quantity | — | [DATA_NEEDED: reel quantity] |