K6X1008C2D-TF55 vs K6F3216U6M-EF70T Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X1008C2D-TF55 disebabkan oleh Samsung Electronics dan K6F3216U6M-EF70T disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K6X1008C2D-TF55 - 1Mbit 128Kx8 SRAM 55ns 5V | Samsung
K6X1008C2D-TF55 ✗ Akhir Hayat
Pengandingan Spesifikasi
| Parametr | K6X1008C2D-TF55 | K6F3216U6M-EF70T |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Akhir Hidup | Aktif |
| Jenis Ingatan | SRAM - Asynchronous | SRAM - Asynchronous |
| Saiz Ingatan | 1 Mbit | 32 Mbit |
| Organisasi | 128K x 8 | 2M x 16 |
| Access Time (tAA) | 55 ns | — |
| Antaramuka | Parallel | Parallel |
| Supply Voltage (Vcc) | 4.5 V to 5.5 V | — |
| Operating Current | 35 mA | — |
| Technology | Low Power Full CMOS | Full CMOS Static RAM |
| Kemasan | 32-TSOP REVERSE | 55-TFBGA (7.5 x 12 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Speed Options | 55 ns, 70 ns | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Memory Format | Volatile (SRAM) | — |
| Clock Frequency | N/A (asynchronous) | — |
| Status RoHS | RoHS: Yes (per distributor listing) | NO (per third-party listing) |
| Tegangan Pemberi Arus | — | 3 V |
| Access Time | — | 55 ns |
| Speed Grade | — | -EF70 (55 ns) |
| Standard Pack Qty | — | 2400 |
| Memory Composition | — | Volatile SRAM |
| Refresh Requirement | — | None (static memory) |