K6X1008C2D-TF55 vs K6F3216U6M-EF70T 比較
詳細並排比較 K6X1008C2D-TF55 由 Samsung Electronics 與 K6F3216U6M-EF70T 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K6X1008C2D-TF55 | K6F3216U6M-EF70T |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 停產終止 | 啟用中 |
| 記憶體類型 | SRAM - Asynchronous | SRAM - Asynchronous |
| 記憶體容量 | 1 Mbit | 32 Mbit |
| 組織 | 128K x 8 | 2M x 16 |
| Access Time (tAA) | 55 ns | — |
| 介面 | Parallel | Parallel |
| Supply Voltage (Vcc) | 4.5 V to 5.5 V | — |
| Operating Current | 35 mA | — |
| Technology | Low Power Full CMOS | Full CMOS Static RAM |
| 封裝 | 32-TSOP REVERSE | 55-TFBGA (7.5 x 12 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Speed Options | 55 ns, 70 ns | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Memory Format | Volatile (SRAM) | — |
| Clock Frequency | N/A (asynchronous) | — |
| RoHS 狀態 | RoHS: Yes (per distributor listing) | NO (per third-party listing) |
| 供應電壓 | — | 3 V |
| Access Time | — | 55 ns |
| Speed Grade | — | -EF70 (55 ns) |
| Standard Pack Qty | — | 2400 |
| Memory Composition | — | Volatile SRAM |
| Refresh Requirement | — | None (static memory) |