MT40A512M16AD-062E vs K4A8G165WG-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A512M16AD-062E disebabkan oleh Micron Technology dan K4A8G165WG-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT40A512M16AD-062E - 8Gbit DDR4 SDRAM x16 3200MT/s | Micron
MT40A512M16AD-062E ✓ AktifSamsung Electronics
K4A8G165WG-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WG-BCWE ✓ AktifPengandingan Spesifikasi
| Parametr | MT40A512M16AD-062E | K4A8G165WG-BCWE |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $35.98 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM (Volatile DRAM) |
| Saiz Ingatan | 8 Gbit | 8 Gbit |
| Organisasi | 512M x 16 | — |
| Clock Frequency | 1.6 GHz | — |
| Access Time (Row Cycle) | 19 ns | — |
| Antaramuka | Parallel (POD) | Parallel |
| Kemasan | 96-FBGA (7.5 mm x 13.5 mm) | FBGA-96 (BGA-96), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AUT:E (automotive variant) | — |
| Speed Grade | -062E | — |
| Tegangan Pemberi Arus | [DATA_NEEDED: core supply voltage (VDD)] | 1.2 V |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | 0C to +85C (commercial) |
| Prefetch Architecture | 8n with bank groups | — |
| HS Code (USHTS) | 8542320071 | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Standard Pack Quantity | [DATA_NEEDED: reel quantity] | — |
| Memory Organization | — | 512M x 16 |
| Max Data Rate | — | 3200 Mbps/pin |
| Clock Cycle Time | — | 19 ns |
| Refresh | — | Auto/self refresh per DDR4 standard |
| Manufacturer | — | Samsung Semiconductor, Inc. |
| Product Status | — | Active |
| Typical Standby Current | — | 20 mA (per LCSC listing) |
| Die Generation | — | Samsung B-die, 8Gb DDR4 x16 |