MT40A512M8SA-062E vs K4A4G085WE-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT40A512M8SA-062E disebabkan oleh Micron Technology dan K4A4G085WE-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MT40A512M8SA-062E | K4A4G085WE-BCRC |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 4 Gbit | — |
| Organisasi | 512M x 8 | 512M x 8 |
| Clock Frequency | 1.6 GHz | — |
| Kadar Data | 3200 MT/s (DDR4-3200 class) | 2400 Mbps |
| Access Time | 13.75 ns | — |
| Write Cycle Time | 15 ns | — |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP Supply | 2.5 V (-125 mV / +250 mV) | — |
| Antaramuka | Parallel, 1.2 V pseudo open-drain I/O | Parallel |
| VREFDQ | On-die internal adjustable generation | — |
| Kemasan | 78-FBGA (7.5 x 11 mm), Z10B | FBGA-78 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Operating Temperature (TC max) | up to 95 degrees C | — |
| Package Flow | :F (lead-free / RoHS) | — |
| Gaya Pemasangan | SMD/SMT | — |
| Density | — | 4 Gbit |
| Clock Cycle Time (tCK) | — | 0.833 ns |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Core Voltage (VPP) | — | 2.5 V |
| Process Node Family | — | Samsung E-die |
| Bank Groups | — | 4n prefetch DDR4 architecture |
| Suhu Operasi | — | [DATA_NEEDED: Operating Temperature Range] |
| Refresh | — | 8n / 1X refresh (per JEDEC DDR4) |
| Aras MSL | — | [DATA_NEEDED: Moisture Sensitivity Level] |
| Status RoHS | — | Compliant (per LCSC listing) |