MT40A512M8SA-062E vs K4A4G085WE-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A512M8SA-062E sa pamamagitan ng Micron Technology at K4A4G085WE-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M8SA-062E - 4Gb DDR4 SDRAM x8, 3200 | Micron
MT40A512M8SA-062E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT40A512M8SA-062E | K4A4G085WE-BCRC |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 4 Gbit | — |
| Organisasyon | 512M x 8 | 512M x 8 |
| Clock Frequency | 1.6 GHz | — |
| Rate ng Data | 3200 MT/s (DDR4-3200 class) | 2400 Mbps |
| Access Time | 13.75 ns | — |
| Write Cycle Time | 15 ns | — |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP Supply | 2.5 V (-125 mV / +250 mV) | — |
| Interface | Parallel, 1.2 V pseudo open-drain I/O | Parallel |
| VREFDQ | On-die internal adjustable generation | — |
| Packhaging | 78-FBGA (7.5 x 11 mm), Z10B | FBGA-78 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Operating Temperature (TC max) | up to 95 degrees C | — |
| Package Flow | :F (lead-free / RoHS) | — |
| Style ng Pagpapasok | SMD/SMT | — |
| Density | — | 4 Gbit |
| Clock Cycle Time (tCK) | — | 0.833 ns |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Core Voltage (VPP) | — | 2.5 V |
| Process Node Family | — | Samsung E-die |
| Bank Groups | — | 4n prefetch DDR4 architecture |
| Temperature na Operasyon | — | [DATA_NEEDED: Operating Temperature Range] |
| Refresh | — | 8n / 1X refresh (per JEDEC DDR4) |
| Level ng MSL | — | [DATA_NEEDED: Moisture Sensitivity Level] |
| Tindminan RoHS | — | Compliant (per LCSC listing) |