NT5AD512M16C4-JRU vs MT40A512M8SA-062E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT5AD512M16C4-JRU disebabkan oleh Nanya Technology dan MT40A512M8SA-062E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Nanya Technology
NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya
NT5AD512M16C4-JRU ✓ Aktif
Pengandingan Spesifikasi
| Parametr | NT5AD512M16C4-JRU | MT40A512M8SA-062E |
|---|---|---|
| Merek | Nanya Technology | Micron Technology |
| Kategori | DRAM | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $83.00 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | — |
| Organisasi | 512M x 16 | 512M x 8 |
| Clock Frequency | 1600 MHz (3200 Mbps data rate) | 1.6 GHz |
| CAS Latency (CL) | 22 at 1600 MHz | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Kemasan | 96-ball FBGA (PBGA96) | 78-FBGA (7.5 x 11 mm), Z10B |
| Suhu Operasi | -40 C to +95 C (industrial grade) | — |
| Antaramuka | CMOS, DDR4 | Parallel, 1.2 V pseudo open-drain I/O |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask (DM) | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Green Product (per Nanya product page) | — |
| Saiz Ingatan | — | 4 Gbit |
| Kadar Data | — | 3200 MT/s (DDR4-3200 class) |
| Access Time | — | 13.75 ns |
| Write Cycle Time | — | 15 ns |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP Supply | — | 2.5 V (-125 mV / +250 mV) |
| VREFDQ | — | On-die internal adjustable generation |
| Operating Temperature (TC max) | — | up to 95 degrees C |
| Package Flow | — | :F (lead-free / RoHS) |
| Gaya Pemasangan | — | SMD/SMT |