NT5AD512M16C4-JRU vs MT40A512M8SA-062E 比較
詳細並排比較 NT5AD512M16C4-JRU 由 Nanya Technology 與 MT40A512M8SA-062E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Nanya Technology
NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya
NT5AD512M16C4-JRU ✓ 啟用中
規格比較
| 參數 | NT5AD512M16C4-JRU | MT40A512M8SA-062E |
|---|---|---|
| 品牌 | Nanya Technology | Micron Technology |
| 類別 | DRAM | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $83.00 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | — |
| 組織 | 512M x 16 | 512M x 8 |
| Clock Frequency | 1600 MHz (3200 Mbps data rate) | 1.6 GHz |
| CAS Latency (CL) | 22 at 1600 MHz | — |
| Supply Voltage (VDD) | 1.2 V | — |
| 封裝 | 96-ball FBGA (PBGA96) | 78-FBGA (7.5 x 11 mm), Z10B |
| 工作溫度 | -40 C to +95 C (industrial grade) | — |
| 介面 | CMOS, DDR4 | Parallel, 1.2 V pseudo open-drain I/O |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask (DM) | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Green Product (per Nanya product page) | — |
| 記憶體容量 | — | 4 Gbit |
| 資料速率 | — | 3200 MT/s (DDR4-3200 class) |
| Access Time | — | 13.75 ns |
| Write Cycle Time | — | 15 ns |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP Supply | — | 2.5 V (-125 mV / +250 mV) |
| VREFDQ | — | On-die internal adjustable generation |
| Operating Temperature (TC max) | — | up to 95 degrees C |
| Package Flow | — | :F (lead-free / RoHS) |
| 安裝方式 | — | SMD/SMT |