EP1S30F780C8 - 32,470 LEs Stratix FPGA, 597 I/O, 780-FBGA | Intel
MPN: EP1S30F780C8 ⚠ Last Time Buy| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $285 | $285.00 |
| 10 | $256.5 | $2,565.00 |
| 100 | $228 | $22,800.00 |
| 500 | $199.5 | $99,750.00 |
| 1,000 | $175 | $175,000.00 |
Drop-in alternatives for EP1S30F780C8 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
EP1S30F780C7
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View Datasheet →EP1S30F780C7N
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View Datasheet →EP1S30F780C7AA
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View Datasheet →EP1S30F780C6
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View Datasheet →EP1S30F780C6N
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View Datasheet →EP1S30F780C6GA
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View Datasheet →EP1S25F780C7
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View Datasheet →EP1S30F780C8 Maximum Ratings & Electrical Characteristics
| Family | Stratix (EP1S) |
| Logic Elements | 32,470 |
| Logic Family | CMOS |
| Process Technology | 130 nm |
| Core Supply Voltage | 1.5 V |
| Maximum User I/O | 597 |
| Maximum Operating Frequency | 357.14 MHz |
| Package | 780-ball FC-FBGA (F780) |
| Package Size | 29 mm × 29 mm |
| Ball Pitch | 1.0 mm |
| Operating Temperature | 0 °C to 85 °C (Commercial) |
| Mounting Style | Surface Mount (SMD) |
| Configuration Modes | PS, PPS, PPA, FPP, JTAG |
| Memory Interface Support | DDR, DDR2, QDR, ZBT SRAM |
| I/O Standards | LVDS, LVPECL, PCI, PCI-X, HSTL, SSTL |
| RoHS Status | Non-compliant (legacy SnPb ball finish) |
| Speed Grade | C8 (Commercial, grade 8) |
EP1S30F780C8 Pin Configuration
| Pin A1 | I/O — User I/O, dual-purpose pin (bank and function dependent on configuration) |
| Pin A20 | I/O — User I/O, dual-purpose pin |
| Pin AH1 | I/O — User I/O, dual-purpose pin |
| Pin AH20 | I/O — User I/O, dual-purpose pin |
| Pin B5 | VCCINT — 1.5 V core supply |
| Pin B15 | VCCIO — I/O bank supply (per bank) |
| Pin J10 | GND — Common ground |
| Pin T10 | DCLK — Configuration clock (PS/PPS/FPP) |
| Pin T11 | DATA0 — Configuration data bit 0 |
| Pin U11 | nCONFIG — Configuration start (active low) |
| Pin U12 | nSTATUS — Configuration status (active low) |
| Pin V12 | CONF_DONE — Configuration done (active high) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
EP1S30F780C8 is suitable for 6 applications: ASIC Prototyping and Emulation, Telecom Line-Card Processing, High-Speed Image and Video Pipelines, Military and Aerospace Signal Processing, Communications Infrastructure - DSLAM and Protocol Bridge, Test and Measurement Instrumentation.
ASIC Prototyping and Emulation
The EP1S30F780C8 with 32,470 LEs and embedded TriMatrix memory is a classic vehicle for ASIC prototyping and emulation platforms that emulate a multi-million-gate ASIC prior to silicon spin. Its 597 user I/O pins allow mapping of wide ASIC buses, while the Quartus II software flow preserves the RTL design that maps directly to a structured ASIC or a Stratix II (EP2S) production device. Engineers benefit from 130 nm silicon predictability and known-good timing models, while its 357 MHz internal clock budget handles most synthesised state machines and bus bridges without timing failure. Compared with a discrete emulator built from many smaller FPGAs, a single EP1S30 cuts board area and inter-chip interconnect latency.
Recommended
Telecom Line-Card Processing
In telecom line cards the EP1S30F780C8 functions as a glue-logic and packet-processing engine between network processors and external PHY/Framer devices, exploiting its 597 user I/O pins for parallel LVDS to a backplane. The embedded DSP blocks can run Viterbi, Reed-Solomon, or Turbo decode at line rate while TriMatrix memory buffers cells, and the on-chip PLLs synthesise the 77.76 MHz STS-1 reference from a 19.44 MHz system clock. Its 130 nm process gives stable performance across commercial 0–85 °C operation expected in central-office equipment, and its 1.5 V core voltage minimises heat-rise in dense line-card slots.
Recommended
High-Speed Image and Video Pipelines
The EP1S30F780C8's embedded DSP blocks and TriMatrix memory deliver the parallel pixel throughput needed for broadcast video processing, machine-vision pre-processing, and HD-SDI crosspoint switches. Its LVDS-capable I/O pairs accept Camera Link or Channel Link inputs at up to 840 Mbps per pair, while embedded memory absorbs line and frame buffers without external SRAM. Compared with a GPU, the EP1S30 gives deterministic latency, which is critical for industrial vision synchronised to encoder wheels or conveyor belts, and 597 I/O pins leave headroom for multiple parallel Camera Link channels.
Recommended
Military and Aerospace Signal Processing
The -AA and -GA suffix variants of EP1S30F780C8 are screened for extended and aerospace temperature ranges, making them a long-life sustainment option for radar, electronic-warfare, and avionics signal-processing boards already fielded on Stratix silicon. The 32,470 LEs and embedded DSP blocks handle beamforming and pulse-Doppler FFTs at IF sample rates, while the 780-ball FC-FBGA provides the mechanical ruggedness required for vibration and thermal-cycling profiles in MIL-STD-1540 testing. Engineers with long-term sustainment obligations favour the original Stratix family over newer nodes because of its mature Quartus II tool support, ITAR-controlled bitstreams, and stable supply.
Recommended
Communications Infrastructure - DSLAM and Protocol Bridge
The EP1S30F780C8 serves as a multi-protocol bridge in DSLAM, GPON OLT, and SONET/SDH cross-connect line cards, mapping ATM, Ethernet, GFP, and PPP streams between framer and network processor domains. Its 32,470 LEs are sufficient to implement the cell delineation, jitter buffering, and HDLC encapsulation logic in parallel for hundreds of subscriber lines, while the 597 I/O pins handle LVDS to the framer and HSTL to the network processor. Compared with discrete ASIC bridges, the EP1S30 cuts NRE and lets carriers roll out new encapsulations as the standard evolves.
Recommended
Test and Measurement Instrumentation
In ATE, oscilloscope, and protocol-analyser instruments the EP1S30F780C8 implements wide parallel acquisition front-ends, custom triggering logic, and display-pipeline buffers. Its TriMatrix memory provides deep pre-trigger sample storage while the embedded DSP blocks run FFT and statistical-reduction pipelines in real time. The 597 I/O pins interface to high-speed ADCs and DACs over LVDS, and the on-chip PLLs generate low-jitter multi-domain clocks needed for coherent sampling, all in a single programmable device that lets instrument vendors ship protocol updates without respinning the hardware.
Recommended
Recommended Products Summary
Engineering reference data for EP1S30F780C8 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | EP1S30F780C7 | EP1S30F780C7N | EP1S30F780C6 | EP1S25F780C7 |
|---|---|---|---|---|---|
| Package | 780-ball FC-FBGA (F780) | 780-ball FC-FBGA (F780) - same | 780-ball FC-FBGA (F780) - same | 780-ball FC-FBGA (F780) - same | 780-ball FC-FBGA (F780) - same |
| Brand | Intel | Intel | Intel | Intel | Intel |
| Logic Elements | 32,470 | 32,470 | 32,470 | 32,470 | 24,060 |
| Speed Grade | C8 | C7 (faster) | C7 (faster) | C6 (slower) | C7 (faster) |
| Maximum User I/O | 597 | 597 | 597 | 597 | 597 |
| Core Supply Voltage | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V |
| RoHS Compliant | No | No | Yes | No | No |
| Process / Node | 130 nm CMOS | 130 nm CMOS | 130 nm CMOS | 130 nm CMOS | 130 nm CMOS |
| Operating Temperature | 0 °C to 85 °C (Commercial) | 0 °C to 85 °C (Commercial) | 0 °C to 85 °C (Commercial) | 0 °C to 85 °C (Commercial) | 0 °C to 85 °C (Commercial) |
Key Differentiators
- 32,470 LEs with 597 user I/O in a single 780-ball FC-FBGA (vs EP1S25F780C7)
- C8 speed grade is widely available in last-time-buy (vs EP1S30F780C7)
- Embedded TriMatrix memory and DSP blocks for high-throughput DSP (vs EP1K50FC484-3 (legacy APEX family))
Design Notes
The EP1S30F780C8 requires a tight 1.5 V VCCINT rail with ±3 % regulation and a separate VCCIO supply for each I/O bank. Estimated core current at 357 MHz worst-case utilisation is approximately 1.2 A (estimate based on Stratix power characterisation data), so a switching regulator followed by an LDO filter is recommended. Decouple each VCCINT ball pair with a 0.1 µF X7R plus a 10 µF bulk capacitor placed within 100 mil of the ball.
The 780-ball FC-FBGA with 1.0 mm pitch requires a 4-layer minimum PCB stack-up with continuous GND and PWR planes directly under the device. Escape routing must use 4 mil traces between 1.0 mm-pitch vias, with via-in-pad recommended for inner balls. J-STD-020 MSL-3 floor life of 168 hours must be respected for the lead-free 'N' suffix variants.
Estimated worst-case junction temperature at 357 MHz full utilisation is approximately 78 °C with the FC-FBGA package bottom-mounted thermal pad soldered to a 25 cm² inner copper pour; no external heatsink is required for commercial 0–85 °C operation. For -AA extended-temperature variants, add thermal vias under the package and ensure junction temperature stays below 100 °C via Quartus II PowerPlay analysis.
Do not assume Stratix pinout compatibility with Stratix II (EP2S) even when both use the same F780 package - bank voltages and PLL pin assignments changed between families. Always cross-reference your design's pin assignments against the Stratix (not Stratix II) handbook chapter 6, and never hot-swap the part without verifying that the configuration bitstream was recompiled with Quartus II version 5.1 or later.
Compliance Information
Reported RoHS non-compliant (SnPb ball finish) by distributor listings. Lead-free RoHS-compliant variants carry the 'N' suffix. REACH, halogen-free status not stated in verified data; AEC-Q100 not applicable to commercial-grade FPGAs.
