FDP025N06 - 60V 265A N-Channel PowerTrench MOSFET | onsemi
MPN: FDP025N06 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.25 | $3.25 |
| 10 | $2.98 | $29.80 |
| 100 | $2.72 | $272.00 |
| 500 | $2.45 | $1,225.00 |
| 1,000 | $2.2 | $2,200.00 |
FDP025N06 Overview
A power MOSFET is a voltage-controlled semiconductor switch used in the discrete power device hierarchy (MOSFET -> power transistor -> power management). Unlike bipolar transistors, MOSFETs offer essentially static gate drive, fast switching, and low conduction loss when fully enhanced, making them the default choice for power conversion and motor control stages.
The defining feature of the FDP025N06 is its extremely low 2.5 milliohm RDS(on), achieved with Fairchild's advanced PowerTrench process, which uses a trench-gate cell structure tailored to minimize on-resistance while maintaining superior switching performance. At high load currents, conduction loss scales with the square of current, so halving RDS(on) quarters the I2R loss - this directly translates to cooler operation, smaller heatsinks, and higher efficiency in high-current paths.
The TO-220AB package provides a low thermal-resistance path through the metal tab to a heatsink, supporting the very high 265 A current rating (at specified case temperature) and making the device easy to mount, service, and rework on through-hole boards.
Typical applications include DC-DC converter power stages, motor drives, high-current switching supplies, battery protection circuits, and power distribution systems where low conduction loss at 60 V class blocking voltage is required.
When designing with this device, always derate the current rating against actual thermal conditions - the 265 A figure applies at controlled case temperature, and real dissipation is limited by RDS(on) x I2 and heatsinking.
This page adds value beyond the datasheet by consolidating distributor pricing, verified drop-in alternatives, and practical engineering design notes in one place.
Drop-in alternatives for FDP025N06 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRFB3006PBF
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IRFB7430PBF
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
FDP025N06 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Technology | PowerTrench |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 265 A |
| On-State Resistance (RDS(on)) | 2.5 mOhm |
| Package | TO-220AB (3+Tab) |
| Mounting Type | Through Hole |
| Configuration | Single MOSFET |
| Process | Trench power MOSFET (Fairchild PowerTrench process) |
| Manufacturer Status | onsemi (formerly Fairchild Semiconductor) product |
FDP025N06 Pin Configuration
| Pin 1 | Gate (G) β Gate control terminal; drive with logic/MOSFET driver referenced to source |
| Pin 2 | Drain (D) β Drain terminal; also connected to the metal mounting tab |
| Pin 3 | Source (S) β Source terminal; common reference for gate drive |
Safe Operating Area (DC) - Estimated from 265 A / 60 V ratings
Typical Applications
FDP025N06 is suitable for 6 applications: DC-DC Converter Power Stages, DC Motor Drives and H-Bridges, Battery Protection and Power Distribution, Switch-Mode Power Supplies (SMPS), Inverters and UPS Output Stages, Welding and High-Current Solid-State Relays.
DC-DC Converter Power Stages
The FDP025N06 fits buck, boost, and synchronous rectification power stages operating from 12 V, 24 V, or 36 V input buses where the 60 V rating provides comfortable voltage margin including switching spikes. Its 2.5 milliohm RDS(on) keeps conduction losses low at the tens-to-hundreds of amperes typical of telecom and industrial converter outputs. In a synchronous buck low-side position, low RDS(on) minimizes freewheeling loss, while the PowerTrench process preserves switching speed for high-frequency operation. Use a dedicated gate driver with short gate loops, and verify switching losses at your frequency since the datasheet headline specs cover conduction, not Eoss and Qg related losses.
Recommended
DC Motor Drives and H-Bridges
For brushed and brushless DC motor drives on 12 V to 48 V supplies, the FDP025N06 provides the combination the application demands: 60 V blocking for inductive kickback and regeneration, and 2.5 milliohm RDS(on) that limits heat during high-torque or stall conditions where currents peak far above the nominal rating. The TO-220AB through-hole package bolts directly to extruded heatsinks common in motor controller construction, and its through-hole leads tolerate the vibration and thermal cycling of motor environments better than fine-pitch SMD. In an H-bridge, four of these MOSFETs plus a gate driver IC form a complete power stage; freewheeling occurs through the body diode, so add a Schottky in parallel if diode loss dominates.
Recommended
Battery Protection and Power Distribution
Battery packs and power distribution boards in e-mobility, UPS, and industrial equipment place the FDP025N06 in series with the load path as a low-loss switch. At 2.5 milliohms, even 50 A of continuous current dissipates only about 6 W, keeping the efficiency of the protection FET high. The 60 V rating covers 36 V and 48 V battery systems with headroom for transient events. In these circuits the MOSFET is usually driven fully on or fully off through a driver or charge pump referenced to the battery rail. The TO-220AB tab (drain-connected) should be electrically isolated from any grounded chassis, and sense resistors for current limiting should be placed so ground-lift during switching does not corrupt the control circuitry.
Recommended
Switch-Mode Power Supplies (SMPS)
In offline and isolated SMPS designs the FDP025N06 can serve as the primary switch in low-voltage-input converters or the secondary-side rectifier in 24-48 V output supplies, where its low RDS(on) beats Schottky diodes on efficiency. The PowerTrench process was specifically tailored by Fairchild to minimize on-resistance while maintaining superior switching performance, which helps in hard-switched forward and flyback topologies. Designers should verify the gate charge and switching energy in the datasheet against their controller drive capability, use a clamp or snubber to manage leakage-inductance voltage spikes below 60 V, and keep the transformer-to-MOSFET loop tight to reduce ringing. Estimated thermal margin should be rechecked at full load and minimum input voltage where peak currents are highest.
Recommended
Inverters and UPS Output Stages
Low-frequency and line-frequency inverters for UPS, solar, and backup power systems use the FDP025N06 as the switching element in push-pull or full-bridge output stages fed from 12 V, 24 V, or 48 V battery banks. The very low 2.5 milliohm RDS(on) is critical here because conduction loss dominates efficiency at the high average currents (often over 100 A on a 12 V rail for kilowatt outputs). Paralleling devices is straightforward since RDS(on) self-shares current at full enhancement, and the TO-220AB package allows bolting several units to one heatsink plate. Gate drive should come from a transformer driver or dedicated driver IC with dead-time control to prevent shoot-through in the bridge legs.
Recommended
Welding and High-Current Solid-State Relays
Solid-state relays, spot welder controllers, and battery spot-welding boards demand MOSFETs that survive hundreds of amperes in short pulses, and the FDP025N06's 265 A rating (at controlled case temperature) plus rugged TO-220AB tab make it a common choice for these boards. In an SSR configuration, multiple FDP025N06 devices are paralleled back-to-back or with common-source arrangements to switch AC and DC loads; at 2.5 milliohms each, a bank of four contributes only about 0.6 milliohms equivalent, far less than a triac-based design. Designers must keep pulse duration within the datasheet SOA, mount devices to a low-impedance bus bar or thick copper PCB region, and use fast gate drivers with over-current cutoff protection.
Recommended
Recommended Products Summary
Engineering reference data for FDP025N06 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFB3006PBF | IRFB7430PBF |
|---|---|---|---|
| Package | TO-220AB | TO-220AB - same | TO-220AB - same |
| Brand | onsemi | Vishay Intertechnology | Vishay Intertechnology |
| Drain-Source Voltage | 60 V | 60 V | 60 V |
| RDS(on) | 2.5 mOhm | ~2.0 mOhm | ~1.4 mOhm |
| Continuous Drain Current | 265 A | ~340 A | ~360 A |
| Pinout | G-D-S (TO-220 standard) | G-D-S - same | G-D-S - same |
| Technology Platform | Fairchild/onsemi PowerTrench | Vishay Gen 3 trench MOSFET | Vishay trench MOSFET |
Key Differentiators
- Extremely low 2.5 mOhm RDS(on) for a 60 V through-hole MOSFET (vs IRFB3006PBF)
- TO-220AB through-hole package simplifies thermal design and rework (vs IRFB7430PBF)
- High 265 A current rating with rugged Fairchild PowerTrench silicon (vs IRFB3006PBF)
Design Notes
The 265 A current rating applies at controlled case temperature per datasheet conditions; practical dissipation is I2 x RDS(on). Estimated: at 100 A, conduction loss is about 25 W, requiring a heatsink with roughly 2-3 C/W thermal resistance to keep the junction near 100 C at 50 C ambient. Mount the TO-220AB with thermal grease or phase-change pad, torque the mounting screw to spec, and remember the tab is drain-connected - use an insulating kit (mica/silicone pad and shoulder washer) when the drain net is above chassis ground.
Keep the gate drive loop as short and wide as possible between driver output and pin 1; trench-gate MOSFETs switch quickly and long gate traces with parasitic inductance cause gate ringing and spurious turn-on. Place a 10 kilo-ohm gate-source pull-down resistor so the FET cannot float high during controller startup or when the driver is in Hi-Z. Route source return current directly to the driver ground to prevent source-lead inductance from degenerating the gate signal during fast switching edges.
Do not drive the FDP025N06 directly from a 5 V logic output expecting the rated 2.5 milliohm RDS(on) - full enhancement for this PowerTrench generation typically requires about 10 V gate drive; consult the RDS(on) versus VGS curve in the datasheet. Also avoid substituting surface-mount siblings (e.g. FDB prefix, D2PAK) on a TO-220 footprint - same silicon, different package, not drop-in. Finally, in inductive load circuits verify avalanche energy ratings in the datasheet before relying on unclamped operation.
Compliance Information
Compliance status not stated in the provided web data. The onsemi product page offers a RoHS (Material Composition) report service - verify current compliance there before export-controlled production.
