H58G56AK6PX032N - 4GB LPDDR5 6400Mbps 315FBGA | SK Hynix
MPN: H58G56AK6PX032N ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $13.71 | $13.71 |
| 10 | $13.1 | $131.00 |
| 100 | $12.45 | $1,245.00 |
| 500 | $11.9 | $5,950.00 |
| 1,000 | $11.35 | $11,350.00 |
Drop-in alternatives for H58G56AK6PX032N — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →H58G56AK6PX032N Maximum Ratings & Electrical Characteristics
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | LPDDR5 SDRAM |
| Memory Size | 4 GB (32 Gb) |
| Organization | 512M x 64 (x16 device configuration) |
| Data Rate | 6400 Mbps per pin |
| Supply Voltage (VDD2 / VDDQ / VDD1) | 1.8 V / 1.05 V / 0.5 V |
| Interface | Parallel |
| Package | 315-FBGA |
| Mounting Type | Surface Mount |
| Grade | Automotive |
| Product Status | Active |
| Packaging | Tray |
H58G56AK6PX032N 315-fbga Pin Configuration Guide
Complete pinout information for H58G56AK6PX032N (315-fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for H58G56AK6PX032N.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
H58G56AK6PX032N is suitable for 6 applications: Automotive ADAS Domain Controllers, Automotive In-Vehicle Infotainment (IVI), 5G Smartphone and Tablet Main Memory, Edge AI Accelerator Buffering, Industrial Computing Modules, Test, Measurement and Networking Appliances.
Automotive ADAS Domain Controllers
The H58G56AK6PX032N fits ADAS domain controllers because its 6400 Mbps/pin rate at x64 organization delivers over 50 GB/s of bandwidth, which is required to buffer multi-camera sensor fusion and LiDAR point-cloud processing in real time. The automotive AK6 product line targets in-vehicle quality flows and extended environmental robustness expected in ADAS platforms. In a typical topology, one or two devices form a channel pair behind the ADAS SoC's LPDDR5 controller; the 1.05V VDDQ rail reduces I/O power compared with LPDDR4X, easing thermal budgets in fanless enclosures. Design consideration: at 6400 Mbps, trace-length matching within ±2 mm and controlled-impedance stackup are mandatory for eye-margin compliance.
Recommended
Automotive In-Vehicle Infotainment (IVI)
IVI head units and cockpit computers need high memory bandwidth for multi-display rendering, navigation, and voice processing; the H58G56AK6PX032N provides 4GB per device at 6400 Mbps in the same 315FBGA footprint used across SK Hynix automotive LPDDR5, enabling platform scaling. Its triple-rail supply (1.8V/1.05V/0.5V) integrates cleanly with automotive PMICs offering LPDDR5 sequencing, and self-refresh power states preserve state during standby, which matters for always-on features like wake-word detection. Because IVI boards are typically 6-8 layer HDI PCBs, the fly-by LPDDR5 topology fits existing routing conventions. Performance consideration: pairing two devices doubles bandwidth to 100+ GB/s for high-resolution cluster plus center-stack rendering.
Recommended
5G Smartphone and Tablet Main Memory
Flagship 5G smartphones require LPDDR5-class bandwidth to keep modems, ISPs, and application processors fed during concurrent 5G data sessions and computational photography workloads. The H58G56AK6PX032N's 6400 Mbps/pin rate and 0.5V core rail deliver both throughput and battery-friendly dynamic power; deep power-down and per-bank refresh reduce standby drain during cellular idle. PoP-style stacking or discrete placement on the mainboard both work with the 315FBGA format, though discrete mounting simplifies rework. Key benefit: at equal bandwidth, LPDDR5 I/O power at 1.05V VDDQ is lower than LPDDR4X at equivalent speed, extending effective screen-on time in modem-heavy 5G usage patterns.
Recommended
Edge AI Accelerator Buffering
Edge AI inference modules - camera analytics, defect inspection, smart retail sensors - need working memory sized to activation maps and model weights; 4GB per H58G56AK6PX032N device with 50+ GB/s bandwidth supports int8 CNN pipelines without becoming the bottleneck. The x16/x64 configuration matches common NPU memory controllers, and LPDDR5's bank-group parallelism sustains the mixed read/write traffic typical of layer-by-layer inference. Compared with DDR4 solutions, the lower 1.05V/0.5V rails cut memory subsystem power, which is often the dominant load in passively cooled edge boxes. Design consideration: verify your NPU's LPDDR5 PHY supports 6400 Mbps binning and that IBIS models from SK Hynix are used in SI simulation.
Recommended
Industrial Computing Modules
COMs (computer-on-modules) and industrial gateways increasingly adopt LPDDR5 for its bandwidth-per-watt advantage in machine vision and predictive-maintenance workloads. The H58G56AK6PX032N's 4GB capacity suits Linux-based real-time controllers with graphics output, and its automotive-grade process heritage provides robustness margins valued in industrial temperature environments. The 315FBGA package is solderable on standard SMT lines and compatible with reflow profiles used for module manufacturing. Note that industrial LPDDR5 use requires verifying the controller's supported device list; using the same-family H58G46 variants simplifies platform qualification when 6400 Mbps binning is not required and cost sensitivity is higher.
Recommended
Test, Measurement and Networking Appliances
High-throughput test instruments and network appliances (5G small-cell gateways, packet brokers) use LPDDR5 as buffering memory where line-rate packet processing demands sustained random-access bandwidth. The H58G56AK6PX032N supplies 6400 Mbps/pin performance with the parallel interface expected by network SoC memory controllers, and its low VDDQ eases power delivery in 1U chassis with constrained airflow. Multiple devices can be arranged in wide channels to exceed 100 GB/s for deep packet buffering. Reliability consideration: implement the JEDEC-specified ZQ calibration and periodic refresh scheduling in your memory controller firmware to maintain margin over the appliance's 24/7 duty cycle.
Recommended
Recommended Products Summary
Engineering reference data for H58G56AK6PX032N — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | H58G56AK6PX032 | H58G56AK6QX032 | H58G46AK6PX033 | H58G46AK6QX033 |
|---|---|---|---|---|---|
| Package | 315-FBGA | 315-FBGA - same | 315-FBGA - same | 315-FBGA - same | 315-FBGA - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Memory Size | 4 GB (32 Gb) | 4 GB (32 Gb) | 4 GB (32 Gb) | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | LPDDR5 | LPDDR5 | LPDDR5 | LPDDR5 | LPDDR5 |
| Data Rate Class | 6400 Mbps per pin | 6400 Mbps per pin | 6400 Mbps per pin (different speed-bin character) | [DATA_NEEDED] | [DATA_NEEDED] |
| Organization | 512M x 64 | 512M x 64 | 512M x 64 | [DATA_NEEDED] | [DATA_NEEDED] |
| Supply Voltage (VDD2/VDDQ/VDD1) | 1.8 V / 1.05 V / 0.5 V | 1.8 V / 1.05 V / 0.5 V | 1.8 V / 1.05 V / 0.5 V | 1.8 V / 1.05 V / 0.5 V | 1.8 V / 1.05 V / 0.5 V |
| Grade | Automotive | Automotive | Automotive | Automotive | Automotive |
| Lifecycle Status | Active | Active | Active | Active | Active |
Key Differentiators
- Automotive product line qualification (vs H58G56AK6QX032)
- Higher data-rate binning (vs H58G46AK6PX033)
- Low-voltage triple-rail operation (vs Legacy DDR4 alternatives (e.g., H5CG48AGBDX018N))
- No cross-brand drop-in exists (vs MT53E768M32D2ZW-046 (Micron LPDDR5))
Design Notes
At 6400 Mbps/pin, LPDDR5 signal integrity is dominated by trace-length matching and impedance control. Keep command/address fly-by routing within ±2 mm skew per byte lane, hold 40-ohm single-ended trace impedance on DQ lines per your stackup simulation, and use SK Hynix IBIS models (available under NDA) for eye-diagram validation. Avoid referencing DQ nets to split planes; any reference-plane transition via adds impedance discontinuity that consumes timing margin at this data rate.
The H58G56AK6PX032N requires three rails: 1.8V (VDD2), 1.05V (VDDQ), and 0.5V (VDD1/core). Select a PMIC with JEDEC LPDDR5 power-up sequencing and rail supervision. Estimated: at full 6400 Mbps operation with x64 IO activity, expect device current in the hundreds of mA range on VDDQ - size the VDDQ buck converter with at least 50% headroom and low-ESR 22 uF-class decoupling per device. Verify exact currents against the NDA datasheet DC characteristics; this estimate uses generic LPDDR5-6400 loading figures.
Do not substitute LPDDR5 parts across manufacturers without controller validation: Micron MT53E-series and Samsung LPDDR5 use different FBGA ball maps and register sets, so a 'same-spec' swap is a redesign, not a drop-in. Within SK Hynix, speed-bin characters (P vs Q in H58G56AK6PX032N) and revision suffixes (N) affect controller timing tables - always confirm the exact MPN against your SoC vendor's memory compatibility list before layout release.
Use at least a 6-layer stackup with solid reference planes for the LPDDR5 channel. Place the DRAM within 50 mm of the SoC when possible; longer channels demand the controller's write-leveling and read-training to converge. Estimated: with standard FR-4 (Dk ~4.3), propagation is ~150 ps/inch, so a 4-inch channel adds ~600 ps round-trip latency - well within controller compensation but relevant to training-range checks.
Compliance Information
The device is marketed as part of SK Hynix automotive product line (per GlobalSpec product overview), but specific RoHS/REACH/AEC-Q100 qualification evidence was not present in verified web data. Request compliance certificates and PPAP documentation from SK Hynix or your distributor.
