IPD70P04P4L08ATMA2 - 40V P-Channel OptiMOS MOSFET, 70A | Infineon
MPN: IPD70P04P4L08ATMA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.87 | $870.00 |
| 2,500 | $0.72 | $1,800.00 |
Drop-in alternatives for IPD70P04P4L08ATMA2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD90P03P4L-06
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SUD50P04-13L-E3
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IPD70P04P4L08ATMA2 Maximum Ratings & Electrical Characteristics
| Transistor Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -40 V |
| Continuous Drain Current (ID, Tc) | 70 A |
| Power Dissipation (PD, Tc) | 75 W |
| On-State Resistance RDS(on) max | 7.8 mΩ (at VGS = -10 V) |
| Gate-Source Voltage (VGS) max | ±20 V |
| Technology | OptiMOS P-Channel |
| Package | PG-TO252-3-313 (DPAK) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Channel Mode | Enhancement |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Series | OptiMOS |
| RoHS Status | Compliant |
IPD70P04P4L08ATMA2 Pin Configuration
| Pin 1 | Gate — Gate control input; drive negative relative to source to turn on |
| Pin 2 | Drain — Power drain terminal; electrically and thermally connected to the metal tab/backside |
| Pin 3 | Source — Power source terminal; reference for gate drive |
Safe Operating Area (DC, Tc=25°C)
Typical Applications
IPD70P04P4L08ATMA2 is suitable for 6 applications: Automotive High-Side Load Switch, Industrial 24V Battery Reverse-Polarity Protection, Hot-Swap / Inrush Current Limiter, DC Motor Drive H-Bridge (High-Side), Solar Charge Controller Blocking Diode Replacement, Power OR-ing for Redundant Supplies.
Automotive High-Side Load Switch
The IPD70P04P4L08ATMA2's P-Channel polarity and -40 V VDS rating make it ideal for 12 V automotive high-side load switches driving ECU rails, headlamp modules, and seat-heater elements. The 7.8 mΩ RDS(on) keeps conduction losses below 4 W at 20 A continuous, which is critical for thermal management in sealed under-hood enclosures. Because it is P-Channel, the gate can be driven directly by a 0-12 V logic signal referenced to ground, eliminating the need for a charge pump. Place a 10 kΩ gate-source pull-up resistor to guarantee off-state during microcontroller reset.
Recommended
Industrial 24V Battery Reverse-Polarity Protection
In 24 V industrial battery systems, the IPD70P04P4L08ATMA2 serves as a reverse-polarity protection FET placed in series with the battery feed. Its P-Channel orientation lets the source sit on the battery side and drain feed the load, with the gate tied to ground through a Zener-resistor network. At 70 A continuous and 7.8 mΩ RDS(on), full-load voltage drop is just 0.55 V, minimizing wasted power. The -40 V VDS comfortably exceeds transient spikes from inductive loads on 24 V buses, while the +175°C junction rating supports under-hood or cabinet-mounted operation.
Recommended
Hot-Swap / Inrush Current Limiter
The IPD70P04P4L08ATMA2 can be used as the main pass element in -48 V telecom or 24 V industrial hot-swap controllers. Its P-Channel gate allows linear-region operation by driving the gate with a controlled current source, slowly ramping VGS to limit inrush into bulk capacitors. The 75 W continuous dissipation rating handles the brief thermal stress during the linear-regulation phase. Its 7.8 mΩ RDS(on) ensures minimal voltage drop once fully enhanced, preserving system efficiency during normal operation. Add a TVS across drain-source for avalanche protection during switch-off of inductive loads.
Recommended
DC Motor Drive H-Bridge (High-Side)
In a brushed DC motor H-bridge, the IPD70P04P4L08ATMA2 serves as the high-side switch on each leg, paired with an N-Channel MOSFET on the low side. Its 70 A continuous rating covers most sub-100 W motor applications, and the 7.8 mΩ RDS(on) keeps conduction losses low at stall currents. The P-Channel gate drive from a logic-level PWM simplifies the half-bridge driver stage, removing the need for bootstrap capacitors. The +175°C junction rating tolerates the repetitive avalanche stress of PWM-driven inductive motor loads.
Recommended
Solar Charge Controller Blocking Diode Replacement
In photovoltaic charge controllers, the IPD70P04P4L08ATMA2 replaces traditional Schottky blocking diodes, eliminating the 0.3-0.5 V forward drop and improving overall system efficiency by 2-4%. Its P-Channel configuration allows it to be oriented with source on the panel side and drain on the battery side, with the gate tied low to keep the FET on. At 70 A continuous and 7.8 mΩ RDS(on), it easily handles the full panel current with negligible loss. The -40 V VDS rating covers 24 V battery systems with substantial transient margin for inductive wiring spikes.
Recommended
Power OR-ing for Redundant Supplies
In redundant power OR-ing configurations, two IPD70P04P4L08ATMA2 MOSFETs isolate two power sources feeding a common load, with the gate of each controlled by a comparator monitoring the source voltage. The P-Channel orientation places source on the supply side, drain on the load side, allowing the gate to be driven relative to the load return. Its 7.8 mΩ RDS(on) yields only 0.35 V drop at 45 A, much better than Schottky OR-ing diodes. The 70 A rating comfortably handles N+1 redundant server or industrial PSU currents up to 3 kW per feed.
Recommended
Recommended Products Summary
Engineering reference data for IPD70P04P4L08ATMA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD90P03P4L-06 | IPD50P03P4L-06 | IPD90P04P4-06 | SUD50P04-13L-E3 | NTD2955 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Vishay Intertechnology | onsemi |
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | TO-252 (DPAK) - same | TO-252 (DPAK) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage VDS | -40 V | -30 V | -30 V | -40 V | -40 V | -60 V |
| Continuous Drain Current ID | 70 A | 90 A | 50 A | 90 A | 50 A | 12 A |
| RDS(on) max at VGS=10V | 7.8 mΩ | 6.0 mΩ | 10 mΩ | 8.0 mΩ | 13 mΩ | [DATA_NEEDED] |
| Power Dissipation PD | 75 W | 94 W | 60 W | 94 W | 75 W | [DATA_NEEDED] |
| Technology | OptiMOS | OptiMOS | OptiMOS | OptiMOS | TrenchFET | Standard P-Channel |
| Automotive Qualified | Commercial/Industrial grade (ATMA2) | Industrial | Industrial | Industrial | Industrial | Industrial |
Key Differentiators
- P-Channel polarity eliminates charge-pump gate driver (vs IPD90N04S403ATMA1 (N-Channel equivalent in same package))
- Higher continuous drain current than cross-brand alternatives (vs SUD50P04-13L-E3 (Vishay))
- OptiMOS technology minimizes switching losses (vs NTD2955 (standard P-Channel))
- Wide VDS safety margin for 24V industrial transients (vs IPD90P03P4L-06 (Infineon 30V P-Channel))
Design Notes
The DPAK drain tab is the primary thermal path. Use at least 1 square inch of 2 oz copper on the drain pad, with thermal vias (typically 9-12 vias of 0.3 mm drill, 1 mm pitch) connecting to an inner-plane copper pour. Estimated: at 70 A with 7.8 mΩ RDS(on), full-load conduction loss is approximately 38 W, requiring substantial copper to keep Tj below 150°C in 25°C ambient.
Always include a 10 kΩ pull-up resistor from gate to source to keep the FET off during MCU reset or power-up transients. Without this pull-up, drain-source dv/dt from the load can inject charge through Cgd and partially turn on the device, causing shoot-through in H-bridge applications. The gate-source Zener clamp voltage should be below the absolute maximum VGS rating (±20 V for this part).
Estimated: with a typical RthJA of 50°C/W on a 1 sq-in 2 oz copper pad (no heatsink, no airflow), the IPD70P04P4L08ATMA2 dissipates a maximum of 3 W continuous to stay below 175°C Tj in 25°C ambient. At higher ambient temperatures or in sealed enclosures, derate accordingly or add forced airflow. Confirm thermal performance via IR camera measurement during prototyping rather than relying solely on datasheet Rth figures.
Minimize the gate-drive loop area by placing the gate pull-up resistor and any gate driver components within 5 mm of pin 1. Keep the source Kelvin connection (pin 3) separate from the high-current source trace if using a gate driver - this prevents source-inductance-induced gate voltage collapse during high di/dt switching. Standard JEDEC JESD22-A114 ESD handling precautions apply.
Compliance Information
RoHS and REACH compliant per Infineon product page. ATMA2 suffix denotes commercial/industrial grade - not AEC-Q101 qualified. For automotive AEC-Q101 qualified version, request the dedicated automotive-grade part number from Infineon.
